Abstract:A large‐area vacuum‐filtrated MXene electrode deposition and patterning strategy for organic field‐effect transistors is demonstrated in this study. By eliminating the harsh integration process, the unique combination of MXene contact with a monolayer organic semiconductor exhibits a smooth contact interface and uncompromised electrical performance. The findings expand the application range of solution‐processed conductors for organic electronics. High‐quality organic field‐effect transistors (1L‐OFETs) based on monolayers have made significant progress and are expected to be key components in the development of next‐generation flexible electronics. However, a flexible, low‐cost, damage‐free, and metallic conductance electrode that can accurately demonstrate the exceptional electrical properties of 1L‐OFETs is still in high demand. In this study, the vacuum‐filtrated MXene (Ti3C2Tx) is demonstrated to serve as electrodes without causing chemical or thermal damage to the delicate active layer via a dry‐lithography method. By integrating monolayer 2,9‐didecyldinaphtho[2,3‐b:2,3′‐f]thieno[3,2‐b]thiophene (C10‐DNTT) with MXene, the 1L‐OFETs exhibit a low subthreshold swing of 60.7 mV per decade and high field‐effect mobility of 9.5 cm2 V−1 s−1 on a high‐κ dielectric hafnium oxide. The use of MXene electrodes enables the production of solution‐processed conductors that can achieve uncompromised performance compared to metal contacts. Furthermore, owing to the well‐matched work functions, the contact resistance can be reduced to 165 Ω cm by this printing technique. The 1L‐OFETs fabricated on an ultra‐thin conformal parylene substrate also exhibit uniform electrical properties. It is believed that this processing approach of vacuum‐filtrated MXene conductors is a crucial step toward the application of non‐metal contacts for high‐performance flexible electronics.

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