Detailed Investigations on Stability and Optoelectronic Characteristics of the 1T-PdS 2 Monolayer

Priyanka *,Suman Chowdhury,Ritu *,Vinod Kumar,Ramesh Kumar,Fakir Chand
DOI: https://doi.org/10.1088/1402-4896/ad1a0f
2024-01-04
Physica Scripta
Abstract:In this work, detailed theoretical elucidation on the structural stability and optoelectronic characteristics of 1T-PdS 2 monolayer are provided using density functional theory (DFT) as the underlying computational framework. The dynamical and mechanical stabilities of the structure are assessed through the analysis of phonon dispersion spectra and the Born Huang stability criterion. The calculated value of Young's modulus comes out to be 68.75 Nm -1 , which demonstrates high flexibility of the structure. Further, thermal stability of the structure is investigated using Ab-initio molecular dynamics simulations. The first-principle calculations by GGA + SOC (GGA + U) methods reveal that 1T-PdS 2 monolayer is an indirect bandgap semiconductor having bandgap value 1.14 eV (1.173 eV). The dielectric function displays its highest peak in the energy region of 1.5 - 2 eV, whereas the maximum absorption coefficient is observed in the ultraviolet region. Furthermore, the impact of vacancy defects are also investigated on the optoelectronic characteristics of 1T-PdS 2 monolayer. The bandgap changes from indirect nature to direct one and reduces from 1.17 eV to 0.25 eV and 0.43 eV under single palladium and sulphur vacancies, respectively. The optical parameters also show enhancement with the introduction of these vacancies. The computational analysis reveals that 1T-PdS 2 monolayer possess advantageous attributes, making it a viable material for different optoelectronic applications.
physics, multidisciplinary
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