Single crystal growth of layered metallic materials TiTe2 based on a polytelluride flux method

Xiaojing Feng,Zhiqi Li,Guangda Chen,Haoyu Yue,Yan Gao,Xiankun Zhang,Zhongnan Guo,Wenxia Yuan
DOI: https://doi.org/10.1039/d3ce00619k
IF: 3.756
2023-08-23
CrystEngComm
Abstract:Layered metallic transition metal dichalcogenides (TMDs) with bonding-free surfaces and weak Fermi-level pinning properties have exhibited potential application as electrode materials in two-dimensional (2D) semiconductor devices. However, various TMDs metallic materials are not still enriched, especially the lack of the low-work function (<4.5 eV) counterpart. Herein, we report a polytelluride flux growth method for the TiTe 2 single crystal and determine the work function of this IVB group metallic TMD for the first time. The obtained crystal adopts typical 1T-type structure (P-3m1 space group, No.164) with the lattice parameters as a = 3.7668(4) Å and c = 6.4918(10) Å. The TiTe 2 crystal shows metallic behavior with the decreased resistivity upon cooling and a relatively low resistivity value (4.39 × 10 -4 Ω·cm) at room temperature. By ultraviolet photoelectron spectroscopy (UPS), the work function of TiTe 2 is determined as 4.31 eV, which is much smaller than the reported data of other metallic TMDs. Our work demonstrates the interesting work function data of 1T-TiTe 2 , which can be utilized to make excellent metal-semiconductor contacts in 2D semiconductor devices.
chemistry, multidisciplinary,crystallography
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