Enhancement of Thermal Spin Transfer Torque via Bandpass Energy Filtering

Pankaj Priyadarshi,Abhishek Sharma,Bhaskaran Muralidharan

DOI: https://doi.org/10.1109/TNANO.2020.3002854

2019-08-19

Abstract:We propose the use of energy bandpass filtering approach in the magnetic tunnel junction device as a route to enhance the thermal spin transfer torque. Using the spin-resolved non-equilibrium Green's function formalism, we harness the optical analog of anti-reflective coating in a heterostructure MTJ device, that reports a huge spin torque in the linear regime of temperature bias. In particular, we discuss the position of transmission function with respect to the Fermi energy that caters the maximum thermal effect. The boxcar transmission feature of anti-reflective configuration enhances the charge and spin transport through the structure in comparison to the normal superlattice configurations. The thermally excited spin transfer torque is enhanced by almost five times more with our device design. Although, the thermally driven spin torque is much smaller than the potential driven torque, this technique provides an energy-efficient way to switch the magnetization. This opens up a new viable area in the spintronics applications. With the existing advanced thin-film growth technology, the optimized superlattice configurations can be achieved.

Mesoscale and Nanoscale Physics,Other Condensed Matter

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to enhance the thermal spin - transfer torque (TSTT) in magnetic tunnel junction (MTJ) devices through the energy band - pass filtering method. Specifically, the authors propose to use a structure similar to the anti - reflection coating in optics to increase the spin torque in heterostructure MTJ devices. In the linear range of temperature bias, this method can significantly enhance the spin torque.

### Main Problems and Solutions in the Paper

1. **Problems**:
- Traditional spin - transfer torque (STT) usually depends on voltage driving, while thermal spin - transfer torque (TSTT) depends on temperature gradients.
- How to significantly enhance TSTT by optimizing the device structure, thereby providing a more efficient and energy - saving way to switch the magnetization direction of the free layer.

2. **Solutions**:
- **Energy Band - pass Filtering**: By designing a specific superlattice structure (Superlattice, SL), the position of the transfer function relative to the Fermi level can maximize the thermal effect.
- **Anti - Reflective Configuration (Anti - Reflective Configuration, AR - SL)**: Introduce an anti - reflective region so that carriers are almost non - reflective in the band - pass energy range, thereby enhancing charge and spin transport.
- **Theoretical Calculation**: Use the spin - resolved non - equilibrium Greens function formalism for numerical simulation to study the influence of different structural parameters on TSTT.

### Main Findings
- **Enhancement Effect**: Through the AR - SL configuration, the thermally excited spin - transfer torque is enhanced by approximately 5 times.
- **Energy - Efficiency Advantage**: Although the thermally driven spin torque is smaller than the voltage - driven one, this method provides an energy - efficient magnetization switching method.
- **Application Prospects**: This technology opens up new feasible areas for spintronics applications. In particular, combined with the existing advanced thin - film growth techniques, an optimized superlattice configuration can be achieved.

### Formula Summary
- **Green's Function**:
\[
[G(E)] = [EI - H - U - \Sigma_H - \Sigma_C]^{-1}
\]
where \(I\) is the identity matrix, and \(\Sigma_H\) and \(\Sigma_C\) are the self - energy matrices of the hot - end and cold - end ferromagnetic contacts respectively.

- **Current Expression**:
\[
I = q\int dE \, \text{Real}[\text{Trace}(\hat{I}_{op})]
\]
\[
I_s = q\int dE \, \text{Real}[\text{Trace}(\hat{I}_{op}\cdot\sigma_s)]
\]

- **Spin Torque Expression**:
\[
\vec{\tau}_{\text{spin}}=\frac{\gamma\hbar}{2qM_sV}\left((\hat{m}\times(\hat{m}\times\vec{I}_s))-\alpha(\hat{m}\times\vec{I}_s)\right)
\]

Through these methods and techniques, the paper shows how to significantly enhance the thermal spin - transfer torque by optimizing the device structure, thereby providing new possibilities for spintronics applications.