Abstract:Kelvin probe force microscopy (KPFM) has been employed to probe charge carriers in a graphene/hexagonal boron nitride (hBN) heterostructure [Nano Lett, 21, 5013 (2021)]. We propose an approach for operating valley filtering based on the KPFM-induced potential $U_0$ instead of using external or induced pseudo-magnetic fields in strained graphene. Employing a tight-binding model, we investigate the parameters and rules leading to valley filtering in the presence of a graphene quantum dot (GQD) created by the KPFM tip. This model leads to a resolution of different transport channels in reciprocal space, where the electron transmission probability at each Dirac cone ($K_1$= -K and $K_2$ = +K) is evaluated separately. The results show that U0 and the Fermi energy $E_F$ control (or invert) the valley polarization, if electrons are allowed to flow through a given valley. The resulting valley filtering is allowed only if the signs of $E_F$ and $U_0$ are the same. If they are different, the valley filtering is destroyed and might occur only at some resonant states affected by $U_0$. Additionally, there are independent valley modes characterizing the conductance oscillations near the vicinity of the resonances, whose strength increases with $U_0$ and are similar to those occurring in resonant tunneling in quantum antidots and to the Fabry-Perot oscillations. Using KPFM, to probe the charge carriers, and graphene-based structures to control valley transport, provides an efficient way for attaining valley filtering without involving external or pseudo-magnetic fields as in previous proposals.

Valley notch filter in a graphene strain superlattice: Green's function and machine learning approach

The Valley Filter Efficiency of Monolayer Graphene and Bilayer Graphene Line Defect Model

Tunable valley Hall effect in gate-defined graphene superlattices

Single-Valley Engineering in Graphene Superlattices

All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics

Valley Filtering in Graphene with a Dirac Gap

Valley Filter and Valve Effect by Strong Electrostatic Potentials in Graphene.

Floquet-Engineered Valley-Topotronics in Kekul$é\ $- Y Bond Textured Graphene Superlattice

Transmission spectra and valley processing of graphene and carbon nanotube superlattices with inter-valley coupling

Controllable Valley Polarization Using Graphene Multiple Topological Line Defects

A Non-Hermitian Moiré Valley Filter

Valley Supercurrent in the Kekulé Graphene Superlattice Heterojunction

Valley focusing effect in a rippled graphene superlattice

Controlled Growth Of A Line Defect In Graphene And Implications For Gate-Tunable Valley Filtering

Generation Of A Fully Valley-Polarized Current In Bulk Graphene

Valley filters using graphene blister defects from first principles

Nonlinear valley and spin valves in bilayer graphene

Valley-dependent tunneling through electrostatically created quantum dots in heterostructures of graphene with hexagonal boron nitride

Valley-Selective Klein Tunneling through a Superlattice Barrier in Graphene

Manipulation of valley isospins in strained graphene for valleytronics

Magnetic Barrier on Strained Graphene: A Possible Valley Filter