Abstract:Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that reported the evidence of the integer and fractional quantum spin Hall effects in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At {\nu} = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at {\nu} = -3. At {\nu} = -2.5, nonmonotonic temperature dependence of resistivity and large out-of-plane negative magnetoresistance have been observed, which likely arises from the frustrated liquid-like ground state and weak effective Ruderman-Kittel-Kasuya-Yosida interactions. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.

Flat Chern Band From Twisted Bilayer MnBi$_2$Te$_4$

Tuning Flat Bands by Interlayer Interaction, Spin-Orbital Coupling, and External Fields in Twisted Homotrilayer MoS_2

Higher Landau-Level Analogues and Signatures of Non-Abelian States in Twisted Bilayer MoTe$_2$

Multiple Chern bands in twisted MoTe$_2$ and possible non-Abelian states

Fractional Chern Insulators vs. Non-Magnetic States in Twisted Bilayer MoTe$_2$

Gate-tunable antiferromagnetic Chern insulator in twisted bilayer transition metal dichalcogenides

Moiré Fractional Chern Insulators I: First-principles calculations and Continuum Models of Twisted Bilayer MoTe$_2$

Tuning Band Gaps in Twisted Bilayer MoS_2

Magnetic Moiré Surface States and Flat Chern Bands in Topological Insulators

Fractional Chern Insulator in Twisted Bilayer

Gate-Tunable Topological Flat Bands in Trilayer Graphene-Boron Nitride Moiré Superlattices

Robust non-Abelian even-denominator fractional Chern insulator in twisted bilayer MoTe$_2$

Moiré flat bands in alternating twisted $\mathrm{MoTe_2}$ multilayer

Ferromagnetism and Topology of the Higher Flat Band in a Fractional Chern Insulator

Chiral limit and origin of topological flat bands in twisted transition metal dichalcogenide homobilayers

Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2

Integer and fractional Chern insulators in twisted bilayer MoTe2

Tuning flat bands by interlayer interaction, spin-orbital coupling, and external fields in twisted homotrilayer MoS$_2$