Strong electrical magneto-chiral anisotropy in tellurium

G. Rikken,N. Avarvari

DOI: https://doi.org/10.1103/PhysRevB.99.245153

2019-06-26

Abstract:We report the experimental observation of strong electrical magneto-chiral anistropy (eMChA) in trigonal tellurium (t-Te) crystals. We introduce the tensorial character of the effect and determine several tensor elements and we propose a novel intrinsic bandstructure-based mechanism for eMChA which gives a reasonable description of the principal results.

Materials Science,Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore and explain the significant electrical magneto - chiral anisotropy (eMChA) in tellurium (Te) crystals. Specifically, the researchers hope:

1. **Experimental observation of strong eMChA**: Verify through experiments the existence of strong electrical magneto - chiral anisotropy in trigonal tellurium (t - Te) crystals. Previous studies have predicted the existence of this effect, but actually measuring such a significant value is an important progress.

2. **Determination of tensor elements**: Introduce the tensor form to describe eMChA and determine multiple tensor elements in it. Due to the low symmetry of the t - Te crystal structure, the traditional simplified model is no longer applicable, and a more complex fourth - order tensor needs to be used to accurately describe this effect.

3. **Propose a new intrinsic mechanism**: Propose a novel intrinsic mechanism based on the band structure to explain the observed eMChA phenomenon. This mechanism is different from the previously proposed models. It uses the k - linear term in the t - Te band structure to explain the lifting of energy degeneracy, thus leading to a chiral - selective electromagnetic response.

4. **Identify other possible materials**: Through this new mechanism, identify other materials that may exhibit strong eMChA effects, providing a theoretical basis and guidance for future applications. For example, selenium (Se) and its tellurium alloys with similar crystal structures, as well as galena (α - HgS) and other materials may be potential candidates.

### Main contributions

- **Experimental verification**: For the first time, a significant eMChA effect was experimentally observed in t - Te, and its intensity is much higher than that of other materials previously reported.

- **Theoretical explanation**: A new intrinsic mechanism based on the band structure was proposed, which can reasonably explain the experimental results and provide a theoretical framework for further research.

- **Application prospects**: It provides a direction for the development of new materials with stronger eMChA effects. These materials may be used in sensors, electronic devices and other fields in the future.

### Mathematical expressions

The key formulas mentioned in the article include:

- Resistance change depending on current and magnetic field:
\[
R_{D/L}(B, I)=R_0(1 + \mu^2B^2+\gamma_{D/L}\mathbf{B}\cdot\mathbf{I})
\]
where \(\gamma_D = -\gamma_L\) correspond to right - handed and left - handed chiral materials respectively.

- Tensor form of eMChA:
\[
E_{2\omega i}=\gamma_{D/L}^{ijkl}J_{\omega j}J_{\omega k}B_l
\]
where \(\gamma_{D/L}^{ijkl}\) is the fourth - order tensor describing eMChA, and \(J\) is the current density.

- Expression of conductivity:
\[
\sigma_{xx}=\frac{Nq^2\tau}{m^*}(1-\frac{\gamma_{D/L}^{xxxx}J_xB}{k_BT})
\]
where \(\gamma_{D/L}^{xxxx}=\frac{m^*\chi_{D/L}}{Nq\hbar k_BT}\), and \(\chi_{D/L}\) is the parameter describing energy level splitting.

These formulas not only help to understand the experimental phenomena, but also provide a basis for theoretical modeling.