Giant magnetic field from moiré induced Berry phase in homobilayer semiconductors

Hongyi Yu,Mingxing Chen,Wang Yao
DOI: https://doi.org/10.1093/nsr/nwz117
2019-08-07
Abstract:When quasiparticles move in condensed matters, the texture of their internal quantum structure as a function of position and momentum can give rise to Berry phases that have profound effects on materials properties. Seminal examples include the anomalous Hall and spin Hall effects from the momentum-space Berry phases in homogeneous crystals. Here we explore a conjugate form of electron Berry phase arising from the moiré pattern, the texture of atomic configurations in real space. In homobilayer transition metal dichalcogenides, we show the real-space Berry phase from moiré manifests as a periodic magnetic field up to hundreds of Tesla. This quantity tells apart moiré patterns from different origins, which can have identical potential landscape but opposite quantized magnetic flux per supercell. For low energy carriers, the homobilayer moirés realize topological flux lattices for the quantum spin Hall effect. An interlayer bias can continuously tune the spatial profile of moiré magnetic field, whereas the flux per supercell is a topological quantity that can only have a quantized jump observable at moderate bias. We also reveal the important role of the non-Abelian Berry phase in shaping the energy landscape in small moiré. Our work points to new possibilities to access ultra-high magnetic field that can be tailored in the nanoscale by electrical and mechanical controls.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problems that this paper attempts to solve are: **In a homogeneous bilayer semiconductor, how does the moiré - induced Berry phase generate a huge magnetic field, and explore the possibility of this effect achieving superconducting and topological insulating states on the nanoscale.** Specifically, the paper explores the following issues: 1. **The relationship between Berry phase and moiré pattern**: - When quasiparticles move in condensed matter, the change of their internal quantum structure with position and momentum can generate Berry phase, which has a profound impact on the properties of materials. - The paper studies an electronic Berry phase caused by moiré pattern, which originates from the texture of atomic configurations in real space. 2. **The periodic magnetic field generated by moiré pattern**: - In homogeneous bilayer transition - metal dichalcogenides (TMDs), the real - space Berry phase of moiré pattern manifests as a periodic magnetic field, whose intensity can reach hundreds of Tesla. - This magnetic field has complete symmetry, and different - origin moiré patterns can be distinguished by applying different strains or twists. 3. **The topological flux lattice of low - energy carriers**: - For low - energy carriers, moiré pattern realizes the topological flux lattice for the quantum spin Hall effect. - By applying an inter - layer bias voltage, the spatial distribution of the moiré magnetic field can be continuously adjusted, and the magnetic flux in each supercell is a topological invariant and can only have a quantum jump under a moderate bias voltage. 4. **The role of non - Abelian Berry phase**: - The non - Abelian Berry phase plays an important role in shaping the energy landscape of small moiré patterns and can significantly change the potential energy landscape. 5. **The application prospects of electrical and mechanical regulation**: - The research points out that superconducting and topological insulating states can be customized on the nanoscale by electrical and mechanical means, providing new possibilities for exploring ultra - high magnetic fields. ### Main contributions - **Theoretical prediction and experimental verification**: The paper not only provides a theoretical model but also verifies these predictions through first - principles calculations. - **Discovery of new physical phenomena**: It reveals that moiré pattern can generate a huge magnetic field in a homogeneous bilayer semiconductor, and this effect can be regulated by electrical and mechanical means. - **Potential applications**: It provides a theoretical basis and technical approach for achieving superconducting and topological insulating states on the nanoscale in the future. ### Formula summary The formulas involved in the paper include but are not limited to: - Berry curvature: \[ \Omega_k=\langle\partial_k u|\times|\partial_k u\rangle, \quad \Omega_r = \langle\partial_r u|\times|\partial_r u\rangle \] - Moiré Hamiltonian: \[ H_{\text{moire}}=\frac{\hbar^2}{2m^*}(\nabla + A)^2+V(r) \] - Inter - layer coupling parameter: \[ \Delta(\mathbf{r})=\Delta_0\left(\left|e^{i\mathbf{k}_1\cdot\mathbf{r}}+e^{-i\mathbf{k}_2\cdot\mathbf{r}}+e^{-i\mathbf{k}_3\cdot\mathbf{r}}\right|^2-\left|e^{i\mathbf{k}_1\cdot\mathbf{r}}+e^{i\mathbf{k}_2\cdot\mathbf{r}}+e^{i\mathbf{k}_3\cdot\mathbf{r}}\right|^2\right) \] These formulas help explain how moiré pattern generates Berry phase in real space and further leads to the formation of a periodic magnetic field.