Undulation-induced moiré superlattices with 1D polarization domains and 1D flat bands in 2D bilayer semiconductors

Xingfu Li,Sunny Gupta,Boris I. Yakobson

2024-10-23

Abstract:Two-dimensional (2D) materials have a high Föppl-von Kármán number and can be easily bent, much like a paper, making undulations a novel way to design distinct electronic phases. Through first-principles calculations, we reveal the formation of 1D polarization domains and 1D flat electronic bands by 1D bending modulation to a 2D bilayer semiconductor. Using 1D sinusoidal undulation of a hexagonal boron nitride (hBN) bilayer as an example, we demonstrate how undulation induces nonuniform shear patterns, creating regions with unique local stacking and vertical polarization akin to sliding-induced ferroelectrics observed in twisted moiré systems. This sliding-induced polarization is also observed in double-wall BN nanotubes due to curvature differences between inner and outer tubes. Furthermore, undulation generates a shear-induced 1D moiré pattern that perturbs electronic states, confining them into 1D quantum-well-like bands with kinetic energy quenched in modulation direction while dispersive in other directions (1D flat bands). This electronic confinement is attributed to modulated shear deformation potential resulting from tangential polarization due to the moiré pattern. Thus, bending modulation and interlayer shear offer an alternative avenue, termed "curvytronics", to induce exotic phenomena in 2D bilayer materials.

Mesoscale and Nanoscale Physics,Materials Science

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: by periodically bending two - dimensional (2D) bilayer semiconductor materials, explore the resulting 1D polarization domains and 1D flat energy bands, as well as the influence of these phenomena on the electronic structure and physical properties. Specifically, the researchers hope to reveal the following problems through theoretical calculations:

1. **Formation of 1D Polarization Domains**:
- How does the periodic bending of 2D bilayer materials induce 1D polarization domains?
- What are the similarities and differences between these polarization domains and slip - induced ferroelectric domains?

2. **Generation of 1D Flat Energy Bands**:
- How does 1D bending modulation generate 1D moiré superlattices, which in turn affect the electronic states and lead to 1D quantum - well - like flat energy bands?
- What are the kinetic energy quenching characteristics of these flat energy bands in the modulation direction and their dispersion behaviors in other directions?

3. **New Physical Phenomena and Application Potentials**:
- Can bending modulation and inter - layer shearing be used as a new method (called "curvytronics") to induce strange physical phenomena in 2D bilayer materials, such as 1D ferroelectric domains and 1D quantum - well - like electronic states?
- Can these new phenomena be achieved through mechanical bending without relying on complex synthesis, and may be applied in fields such as ultra - thin non - volatile memories and computing devices?

### Mathematical Description of Specific Problems

In order to understand these problems more clearly, the paper uses multiple formulas to describe relevant physical phenomena:

- **Total Potential Step Formula**:
\[
\Delta V_{\text{out}}(y)=\Delta V_{\text{fl}}(y)+\Delta V_{\text{sl}}(y)
\]
where \(\Delta V_{\text{fl}}(y)\) is the flexoelectric potential step caused by local curvature, and \(\Delta V_{\text{sl}}(y)\) is the potential step caused by different local stackings.

- **Relationship between Flexoelectric Potential Step and Curvature**:
\[
\Delta V_{\text{fl}}=\frac{V_0}{R}
\]
where \(V_0\) is the flexoelectric constant and \(R\) is the radius of the local circular - arc approximate curve.

- **Analytical Expressions for Bandwidth and Energy Separation**:
\[
W(h, L)=\frac{c_1 + c_2h^2}{L^2}
\]
\[
E_s(h, L)=c_3\left(\frac{h}{L}\right)^2
\]
where \(c_1, c_2, c_3\) are fitting constants, \(W(h, L)\) represents the bandwidth, and \(E_s(h, L)\) represents the energy separation from the continuous state.

Through these formulas, researchers can quantitatively analyze the influence of bending modulation on the electronic structure, thereby revealing new physical phenomena and potential application prospects.