Analysis of terahertz wave nonlinear reflection by an array of double silicon elements placed on a metal substrate

N V Sydorchuk,S L Prosvirnin,Y Fan,F Zhang
DOI: https://doi.org/10.48550/arXiv.1903.06074
2019-03-14
Abstract:We demonstrate results of a simulation of nonlinear reflection of intensive terahertz radiation from a silicon-on-metal metasurface involving an excitation of a high-Q trapped mode resonance. Conditions are presented to observe effects of bistability and hysteresis of nonlinear reflection.
Applied Physics,Materials Science
What problem does this paper attempt to address?
The problem this paper attempts to address is: studying and simulating the nonlinear reflection characteristics of strong terahertz radiation on a silicon-metal metasurface, particularly involving the excitation of high-Q localized mode resonances. Through this research, the authors aim to reveal bistability and hysteresis effects in nonlinear reflection, which are significant for the development of modulators, limiters, switches, and other devices within the terahertz frequency range. Specifically, the main objectives of the paper include: 1. **Study nonlinear reflection**: Investigate the nonlinear reflection characteristics of strong terahertz radiation on a silicon-metal metasurface through numerical simulations. 2. **Analyze bistability and hysteresis effects**: Explore the bistability and hysteresis phenomena that occur in the process of nonlinear reflection, which are caused by the self-action and feedback mechanisms of the electromagnetic field in the nonlinear medium. 3. **Optimize metasurface design**: Determine the regions of highly localized electromagnetic fields within the metasurface by analyzing the internal electromagnetic field distribution, so as to place active or nonlinear materials in these regions to achieve amplification and radiation generation. Through theoretical analysis and numerical simulations, the paper demonstrates the variation of the nonlinear reflection coefficient with the incident field intensity at specific frequencies and discusses in detail the physical mechanisms of these variations. These research findings provide important guidance for designing high-performance terahertz devices.