Finding pathways for stoichiometric Co4N thin films

Nidhi Pandey,Mukul Gupta,Rachana Gupta,Zaineb Hussain,V. R. Reddy,D. M. Phase,Jochen Stahn

DOI: https://doi.org/10.1103/PhysRevB.99.214109

2019-01-14

Abstract:In this work, we studied the pathways for formation of stoichiometric \tcn~thin films. Polycrystalline and epitaxial \tcn~films were prepared using reactive direct current magnetron (dcMS) sputtering technique. A systematic variation in the substrate temperature (\Ts) during the dcMS process reveals that the lattice parameter (LP) decreases as \Ts~increases. We found that nearly stoichiometric \tcn~films can be obtained when \Ts~= 300\,K. However, they emerge from the transient state of Co target ($\phi$3\,inch). By reducing the target size to $\phi$1\,inch, now the \tcn~phase formation takes place from the metallic state of Co target. In this case, LP of \tcn~film comes out to be $\sim$99\p~of the value expected for \tcn. This is the largest value of LP found so far for \tcn. The pathways achieved for formation of polycrystalline \tcn~were adopted to grow an epitaxial \tcn~film, which shows four fold magnetic anisotropy in magneto-optic Kerr effect measurements. Detailed characterization using secondary ion mass spectroscopy indicates that N diffuses out when \Ts~is raised even to 400\,K. Measurement of electronic structure using x-ray photoelectron spectroscopy and x-ray absorption spectroscopy further confirms it. Magnetization measurements using bulk magnetization and polarized neutron reflectivity show that the saturation magnetization of stoichiometric \tcn~film is even larger than pure Co. Since all our measurements indicated that N could be diffusing out, when \tcn~films are grown at high \Ts, we did actual N self-diffusion measurements in a CoN sample and found that N self-diffusion was indeed substantially higher. The outcome of this work clearly shows that the \tcn~films grown prior to this work were always N deficient and the pathways for formation of a stoichiometric \tcn~have been achieved.

Materials Science