Abstract:The use of individual molecules as functional electronic devices was first proposed in the 1970s (ref. 1). Since then, molecular electronics2,3 has attracted much interest, particularly because it could lead to conceptually new miniaturization strategies in the electronics and computer industry. The realization of single-molecule devices has remained challenging, largely owing to difficulties in achieving electrical contact to individual molecules. Recent advances in nanotechnology, however, have resulted in electrical measurements on single molecules4,5,6,7. Here we report the fabrication of a field-effect transistor—a three-terminal switching device—that consists of one semiconducting8,9,10 single-wall carbon nanotube11,12 connected to two metal electrodes. By applying a voltage to a gate electrode, the nanotube can be switched from a conducting to an insulating state. We have previously reported5 similar behaviour for a metallic single-wall carbon nanotube operated at extremely low temperatures. The present device, in contrast, operates at room temperature, thereby meeting an important requirement for potential practical applications. Electrical measurements on the nanotube transistor indicate that its operation characteristics can be qualitatively described by the semiclassical band-bending models currently used for traditional semiconductor devices. The fabrication of the three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics.

Single carbon nanotube transistor at GHz frequency

Carbon Nanotube Film-Based Radio Frequency Transistors with Maximum Oscillation Frequency above 100 GHz.

High-frequency Performance of Scaled Carbon Nanotube Array Field-Effect Transistors

Low-Temperature Behavior of Single-Wall Carbon Nanotube Gate-all-Around Field-Effect Transistors

Gigahertz Integrated Circuits Based on Carbon Nanotube Films

Operation of Graphene Transistors at GHz Frequencies

Radiofrequency Transistors Based on Aligned Carbon Nanotube Arrays

Sub-10 nm Gate Length Graphene Transistors: Operating at Terahertz Frequencies with Current Saturation

Scaling carbon nanotube complementary transistors to 5-nm gate lengths

Fabrication and electrical characteristics of carbon nanotube field emission microcathodes with an integrated gate electrode

Radio-frequency Transmission Properties of Carbon Nanotubes in a Field-Effect Transistor Configuration

Multiple Functionality in Nanotube Transistors

Carbon Nanotube Radiofrequency Transistors with F T/f MAX of 376/318 GHz

Nanotube and Nanowire Transistors

High performance field effect transistors made of a multiwall nanotube intramolecular junction

Sub-100 nm channel length graphene transistors.

Theoretical Study for Carrier Transit Limited Performance of Gate-All-Around Si Nanowire Transistor by Time-Dependent Quantum Transport Simulation

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Solution-processed Carbon Nanotubes Based Transistors with Current Density of 1.7 Ma/μm and Peak Transconductance of 0.8 Ms/μm

Exploration of Vertical Scaling Limit in Carbon Nanotube Transistors

Room-temperature transistor based on a single carbon nanotube