Experimental Realization and Phase Engineering of a Two-Dimensional SnSb Binary Honeycomb Lattice
Heping Li,Dechun Zhou,Qingyuan He,Nan Si,Benwu Xin,Saiyu Bu,Qingmin Ji,Hui Li,Harald Fuchs,Tianchao Niu
DOI: https://doi.org/10.1021/acsnano.1c05583
IF: 17.1
2021-10-14
ACS Nano
Abstract:Binary two-dimensional (2D) materials comprising main group elements with several phases of AB and AB2 stoichiometry provide significantly rich physics and application potentials. We present the epitaxial growth of two phases of atomically thin SnSb on a Cu2Sb surface alloy under ultrahigh-vacuum (UHV) conditions. Theoretical studies predict that these 2D SnSb sheets adopt the atomic configurations similar to those of black and blue phosphorene but with Sb–Sn–Sn–Sb motif (R- and H-phases) holding an indirect band gap of 0.20 and 0.85 eV, respectively. Our low-temperature (77 K) scanning tunneling microscopy characterizations, and first-principles theoretical calculations, reveal the atomic structures and semiconducting properties of the most stable H-phase, displaying a commensurate lattice growth mode on Cu2Sb(111) but a weak interfacial interaction. Strain-engineered band gap, effective mass, and Young's Modulus of the most stable H-phase are further explored theoretically. These results suggest that 2D SnSb with intriguing properties has great potential for electronics in an atomically thin platform.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.1c05583.Figure S1–S6: schematic and characterization of Cu2Sb substrate; STM images of R-SnSb; DFT optimized Sn superstructures on Cu2Sb surface; FFT images of substrate and SnSb; SEM images of SnSb on copper and SiO2; XPS, Raman spectra of SnSb; Figures S7 and S8: DFT optimized structures of SnSb substituted by Cu atoms; Figure S9: bias-dependent STM images with corresponding line profiles of H-SnSb on Cu2Sb(111). Figure S10: DFT calculated structures of stanene on Cu2Sb(111). Figures S11–S15: STM images of different SnSb thin films at different growth parameters. Figures S16–S19: band structures and DOS of H- and R-SnSb, their strain engineering, and phonon dispersions. Table S1: Calculated Young's modulus (Y); Poisson ration (σ) of SnSb, and other typical 2D materials. Table S2: The elastic Cij of the R-phase, H-phase, graphene, MoS2, and silicene (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology