Abstract:Qubits incorporating Josephson Junctions are essential for developing quantum computing devices, nevertheless, nanostructure and chemical information of the junction have yet been distinctly understood. To address it, comprehensive investigation is performed to decipher atomic structure and compositional features of the Josephson junction which basically consists of an Al/AlO x /Al tri-layer materials system. It is revealed that the top-Al and the bottom-Al layers are with the thickness of 25.8 ± 0.8 nm and 20.4 ± 1.4 nm, respectively, slightly smaller than the intended thickness of 30 nm, which may be due to the inherent error associated to the measuring method based on cross sectional transmission electron microscopy micrographs. In addition, both the top and bottom crystalline Al layers comprise columnar grains with the size of approximately 20 × 30 nm. The AlO x tunnel layer is roughly 2∼4 nm thick and is composed of amorphous materials. The interfaces between AlO x and Al electrodes are jagged rather than flat, implying thickness inhomogeneity which can be possibly ascribed to the mechanisms of atomic steps and grain boundary grooving. Moreover, EELS spectrum imaging reveals a 0.5 nm-thick interfacial layer at boundary of AlO x barrier and Al electrodes. Unique ELNES features at the interfacial layer, including a −2 eV onset-shift of the O-K edge, are correlated with reduction of electronic properties of the barrier layer. Atom probe tomography reveals that composition of the bottom-Al/Si substrate interface primarily comprises AlO, O, C, Al 2 O, SiO, SiO 2 , P, O 2 and Al 2 O 2 and small quantities of SiC 2 , B and AlO 2 . Furthermore, significant strain, e.g., ∼3% normal and shear strain, can be detected in the bottom-Al layer grains, which probably stems from the uneven Si surface during the qubit fabrication process.

Correlating the nanostructure of Al-oxide with deposition conditions and dielectric contributions of two-level systems in perspective of superconducting quantum circuits

Structural and Nanochemical Properties of AlOx Layers in $Al/AlO_x/Al$-Layer Systems for Josephson Junctions

Transient Evolutional Dynamics of Quantum-Dot Molecular Phase Coherence for Sensitive Optical Switching

Simulating the fabrication of aluminium oxide tunnel junctions

Fabrication of Al/AlOx/Al Josephson Junctions and Superconducting Quantum Circuits by Shadow Evaporation and a Dynamic Oxidation Process

Character and Fabrication of Al/Al2O3/Al Tunnel Junctions for Qubit Application.

Optimization of $Al/AlO_x/Al$-Layer Systems for Josephson Junctions from a Microstructure Point of View

Aluminum Josephson junction microstructure and electrical properties modification with thermal annealing

The influence of pinholes and weak-points in aluminium-oxide Josephson junctions

The effect of atomic structure on the electrical response of aluminium oxide tunnel junctions

Probing the Nucleation of Al2O3 in Atomic Layer Deposition on Aluminum for Ultrathin Tunneling Barriers in Josephson Junctions

Fabrication of Superconducting Flux Quantum Bits and the Feature Parameters of Al/AlOx/Al Tunnel Junctions

The density and disorder tuned superconductor-metal transition in two dimensions

Unveiling atomic structure and chemical composition of the Al/AlO x /Al Josephson junctions in qubits

Influence of the stoichiometric ratio of barrier layer alumina on the transport properties of Josephson junctions

Nano-engineering of electron correlation in oxide superlattices

Quantum interference in an interfacial superconductor

Observation of directly interacting coherent two-level systems in an amorphous material

Patterning of superconducting two-dimensional electron gases based on AlO$_x$/KTaO$_3$(111) interfaces

Observation of Josephson harmonics in tunnel junctions