Coherent spin-transfer precession switching in orthogonal spin-torque devices

Graham E. Rowlands,Colm A. Ryan,Li Ye,Laura Rehm,Daniele Pinna,Andrew D. Kent,Thomas A. Ohki

DOI: https://doi.org/10.48550/arXiv.1711.10575

2017-11-29

Abstract:We present experimental results and macrospin simulations of the switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. At $T=4$ K we demonstrate: high speed deterministic switching at short pulse lengths - down to 100 ps - with sufficient measurement statistics to establish a switching error rate of $10^{-5}$; coherent precessional switching at longer times; and ensemble decoherence effects at even longer times. Finite temperature macrospin models capture the precessional switching well but fail to fully reproduce all the decoherence and switching error behavior.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to study the coherent spin - transfer precession switching characteristics in Orthogonal Spin - Torque (OST) devices under low - temperature (about 4 K) conditions. Specifically, the author focuses on the following aspects:

1. **High - speed deterministic switching**: Achieve high - precision, low - error - rate switching at extremely short pulse widths (as low as 100 picoseconds).
2. **Coherent precession switching**: Observe and analyze the coherent precession behavior at longer pulse times.
3. **Dephasing effect**: Study the dephasing phenomenon on a longer time scale and its impact on switching performance.

### Research background
The thermally activated switching mechanism of traditional Spin - Transfer Torque (STT) devices at low temperatures may lead to slower switching speeds and reduced energy efficiency. Therefore, it is of great significance to develop efficient STT devices suitable for low - temperature environments (such as low - temperature memories required for superconducting logic circuits).

### Research methods
The author studied the switching characteristics of OST devices under low - temperature conditions by combining experiments with finite - temperature macro - spin simulations. In the experiment, a customized low - temperature measurement device was used, and current pulses of different amplitudes and durations were applied through a pulse generator and an Arbitrary Waveform Generator (AWG) to construct a switching phase diagram. At the same time, numerical simulations were carried out using the LLGS equation to explore the effects of thermal noise and micromagnetic effects.

### Main findings
1. **High - speed switching**: At a temperature of 4 K, deterministic switching as low as 100 picoseconds was achieved, and the switching error rate was lower than \(10^{- 5}\).
2. **Coherent precession**: The phenomenon of coherent precession switching was observed within a longer pulse time, and the switching probability exhibited periodic oscillations.
3. **Dephasing effect**: For longer pulse times, the dephasing phenomenon was observed, which may be caused by micromagnetic instabilities.

### Comparison between simulation and experiment
Although the finite - temperature macro - spin model can reproduce many qualitative features well, it has limitations in explaining specific probability oscillations and the consistency of the maximum values of AP→P and P→AP switching probabilities. The author believes that further micromagnetic simulations are required to gain a deeper understanding of these phenomena.

### Conclusion
This research provides important experimental and theoretical bases for the design of high - performance spintronic devices in low - temperature environments, and has potential application value especially for application scenarios (such as superconducting logic circuits) that require fast, low - energy - consumption operations.

### Formula summary
The key formulas involved in this paper include:
- **LLGS equation**:
\[
\frac{dm}{d\tau}=-\Gamma_{llg}+\Gamma_{th}+\Gamma_{stt}
\]
where \(m = \frac{\mathbf{M}}{M_s}\) is the unit vector of the free - layer magnetization, \(\Gamma_{llg}\) is the deterministic LLG torque, \(\Gamma_{th}\) is the thermal torque, and \(\Gamma_{stt}\) is the spin - transfer torque.

- **Effective spin - polarization vector**:
\[
\Gamma_{stt}=\tilde{I}m\times(m\times n_{stt})
\]
\[
n_{stt}=P_R\eta(\Lambda_R,m_x)\hat{x}+P_P\eta(\Lambda_P,m_z)\hat{z}
\]
\[
\eta(\Lambda,\cos\theta)=\frac{2\Lambda^2}{\Lambda^2 + 1}+(\Lambda^2 - 1)\cos\theta
\]

These formulas are used to describe the magnetization dynamics behavior in spin - transfer - torque devices.