Composite topological structure of domain walls in synthetic antiferromagnets

A. G. Kolesnikov,V. S. Plotnikov,E. V. Pustovalov,A. S. Samardak,L. A. Chebotkevich,A. V. Ognev,Oleg A. Tretiakov
DOI: https://doi.org/10.1038/s41598-018-33780-6
2017-10-30
Abstract:We experimentally study the structure and dynamics of magnetic domains in synthetic antiferromagnets based on Co/Ru/Co films. Dramatic effects arise from the interaction among the topological defects comprising the dual domain walls in these structures. Under applied magnetic fields, the dual domain walls propagate following the dynamics of bi-meronic (bi-vortex/bi-antivortex) topological defects built in the walls. Application of an external field triggers a rich dynamical response: The propagation depends on mutual orientation and chirality of bi-vortices and bi-antivortices in the domain walls. For certain configurations, we observe sudden jumps of composite domain walls in increasing field, which are associated with the decay of composite skyrmions. These features allow for enhanced control of domain-wall motion in synthetic antiferromagnets with the potential of employing them as information carriers in future logic and storage devices.
Mesoscale and Nanoscale Physics,Materials Science
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to understand the structure and dynamic behavior of magnetic domain walls in synthetic antiferromagnets (SAFs), especially the influence of bi - merons on the motion of magnetic domain walls in Co/Ru/Co films with in - plane magnetic anisotropy. Specifically, the authors studied the following problems through experiments and micromagnetic simulations: 1. **Composite structure of magnetic domain walls**: In synthetic antiferromagnets, magnetic domain walls are composed of two types of domain walls: Néel domain walls (NDW) and transverse domain walls (TDW), and these domain walls are connected by bi - merons. These bi - merons are composed of vortex or antivortex pairs in the upper and lower layers. 2. **Magnetization reversal process under an applied magnetic field**: When an external magnetic field is applied, the magnetization reversal process is determined by the dynamic behavior of these composite domain walls. In particular, the movement and annihilation of bi - merons determine the change in the type of domain wall, its polarity, and the shape of the domain. 3. **Dynamic response of topological defects**: Under an increasing magnetic field, a sudden jump of the composite domain wall is observed, which is related to the decay of composite skyrmions. This phenomenon allows for more precise control of the motion of domain walls in synthetic antiferromagnets, thus providing potential application prospects for future logic and storage devices. 4. **New topologically protected spin textures**: New combinations of topologically protected spin textures in synthetic antiferromagnets have been discovered, and these textures can be controllably manipulated by magnetic fields, currents, or spin currents. In addition, because the dipole - dipole interactions between the two ferromagnetic layers almost cancel each other out, reducing the parasitic effects of stray fields, these structures have unique advantages in nano - devices. In summary, this paper aims to reveal the complex magnetic domain wall structures in synthetic antiferromagnets and their dynamic behaviors under an applied magnetic field, especially the role of bi - merons, and to explore their potential in spintronics applications.