Abstract:Epitaxial growth of graphene on SiC is a candidate system for the growth of graphene on a scale large enough for technological applications [1]. Growth is achieved by annealing at temperatures above 1200C, causing Si to evaporate from the SiC preferentially to C, with the resulting carbon-rich surface forms a graphitic layer, with the structural and electronic properties extremely sensitive to annealing conditions. Crucially, in this system both the supply of carbon and the conditions under which the graphene films coalesce are temperature dependent and therefore closely coupled [2]. We present data from magnetotransport and low energy electron microscopy (LEEM)measurements for (0001) 4H SiC samples annealed under UHV at various temperatures, showing structural and electronic coherence lengths which are in good agreement. The evolution of coherent electronic transport occurs for samples annealed at higher temperatures as the size of individual graphene domains increases from the tens of nm to micron scale under these conditions (shown in figure 1). Using a lower-temperature anneal followed by an additional higher-temperature treatment, we show that the larger grain size is due to a coalescence mechanism, as opposed to faster propagation of single grains. This suggests a means of partially decoupling the carbon supply from the coalescence process: potentially important for integration with large-scale wafer production. Following lithographic patterning, magnetotransport (MR) data have been taken at various cryogenic temperatures and can be fitted to weak localisation (WL) or weak anti-localisation (WAL) models [3, 4], allowing the various electron scattering rates to be ascertained. Following these fitting procedures, subtraction of the fits from the measured data allows less dominant contributions to magnetotransport to be discerned. For less ordered samples, it is necessary to include an electron-electron interaction term to fit successfully to lowtemperature MR data, while the temperatures at which this becomes necessary agree with a deviation from linear temperature dependence of the scattering rate τφ.

Intercalated europium metal in epitaxial graphene on SiC

Intercalated rare-earth metals under graphene on SiC

The Investigation of Cobalt Intercalation Underneath Epitaxial Graphene on 6H-Sic(0 0 0 1)

Calcium Intercalation Underneath N-layer Graphene on 6H-Sic(0001)

Room-Temperature Anomalous Hall Effect in Graphene in Interfacial Magnetic Proximity with EuO Grown by Topotactic Reduction

Integration of the ferromagnetic insulator EuO onto graphene.

Prediction of 2D ferromagnetism and monovalent europium ions in the EuBr/graphene heterojunctions

Electronic and magnetic properties of the graphene/Eu/Ni(111) hybrid system

Intercalation of Mn in graphene/Cu(111) interface: insights to the electronic and magnetic properties from theory

Structural, chemical, and magnetic properties of cobalt intercalated graphene on silicon carbide

Topological Insulators in Transition-Metal Intercalated Graphene: the Role Ofdelectrons in Significantly Increasing the Spin-Orbit Gap

Atomic-scale Morphology and Electronic Structure of Manganese Atomic Layers Underneath Epitaxial Graphene on SiC(0001).

Role of covalent and metallic intercalation on the electronic properties of epitaxial graphene on SiC(0001)

Magnetite nano-islands on silicon-carbide with graphene

Microscopic correlation between chemical and electronic states in epitaxial graphene on SiC(000-1)

Magnetic structure of EuCd$_2$Sb$_2$ single-crystal thin-film

Watching (De)Intercalation of 2D Metals in Epitaxial Graphene: Insight into the Role of Defects (Small 11/2024)

Non-collinear 2k antiferromagnetism in the Zintl semiconductor Eu$_5$In$_2$Sb$_6$

Metal-dielectric transition in Sn-intercalated graphene on SiC(0001)

Grain coalescence and electronic properties of epitaxial graphene

Magnetic properties of Dy nano-islands on graphene