Design of new Mott multiferroics via complete charge transfer: promising candidates for bulk photovoltaics

Hanghui Chen,Andrew J. Millis

DOI: https://doi.org/10.48550/arXiv.1708.05506

2017-08-18

Abstract:Optimal materials to induce bulk photovoltaic effects should lack inversion symmetry and have an optical gap matching the energies of visible radiation. Ferroelectric perovskite oxides such as BaTiO$_3$ and PbTiO$_3$ exhibit substantial polarization and stability, but have the disadvantage of excessively large band gaps. We use both density functional theory and dynamical mean field theory calculations to design a new class of Mott multiferroics--double perovskite oxides $A_2$VFeO$_6$ ($A$=Ba, Pb, etc). While neither perovskite $A$VO$_3$ nor $A$FeO$_3$ is ferroelectric, in the double perovskite $A_2$VFeO$_6$ a `complete' charge transfer from V to Fe leads to a non-bulk-like charge configuration--an empty V-$d$ shell and a half-filled Fe-$d$ shell, giving rise to a polarization comparable to that of ferroelectric $A$TiO$_3$. Different from nonmagnetic $A$TiO$_3$, the new double perovskite oxides have an antiferromagnetic ground state and around room temperatures, are paramagnetic Mott insulators. Most importantly, the V $d^0$ state significantly reduces the band gap of $A_2$VFeO$_6$, making it smaller than that of $A$TiO$_3$ and BiFeO$_3$ and rendering the new multiferroics a promising candidate to induce bulk photovoltaic effects.

Materials Science