Abstract:Last few years have witnessed significant enhancement of thermoelectric figure of merit of lead telluride (PbTe) via nanostructuring. Despite the experimental progress, current understanding of the electron transport in PbTe is based on either band structure calculation using first principles with constant relaxation time approximation or empirical models, both relying on adjustable parameters obtained by fitting experimental data. Here, we report parameter-free first-principles calculation of electron and phonon transport properties of PbTe, including mode-by-mode electron-phonon scattering analysis, leading to detailed information on electron mean free paths and the contributions of electrons and phonons with different mean free paths to thermoelectric transport properties in PbTe. Such information will help to rationalize the use and optimization of nanosctructures to achieve high thermoelectric figure of merit.

What problem does this paper attempt to address?

This paper attempts to solve the problems existing in the thermoelectric properties of lead telluride (PbTe) materials, especially the understanding and optimization of electron transport properties. Specifically: 1. **Limitations of Existing Research**: - The current understanding of electron transport characteristics in PbTe mainly depends on two methods: band - structure calculations based on first - principles (using the constant relaxation time approximation) or empirical models. Both of these methods rely on adjustable parameters obtained by fitting experimental data. - These methods fail to provide a sufficient microscopic physical picture, especially insufficient guidance in nanostructure design to improve the thermoelectric figure of merit (zT). 2. **Objectives of the Paper**: - Through parameter - free first - principles calculations, study in detail the electron and phonon transport characteristics in PbTe, including mode - resolved electron - phonon scattering analysis. - Provide detailed information about the electron mean - free - path and the contributions of electrons and phonons with different mean - free - paths to thermoelectric transport characteristics. - Help rationalize the design and optimization of nanostructures to achieve a higher thermoelectric figure of merit. 3. **Key Issues**: - **Differences in Electron and Phonon Mean - Free - Paths**: Understanding the mean - free - paths of electrons and phonons is crucial for designing effective nanostructures. For example, in silicon, the electron mean - free - path is about several tens of nanometers, while the phonon mean - free - path can reach several micrometers. This difference enables nanostructures to effectively scatter phonons without affecting electron transport. - **In - depth Understanding of Electron Transport Mechanisms**: Most past studies have used the constant relaxation time approximation to study the electrical transport characteristics of PbTe, which limits the detailed understanding of carrier dynamics. This study aims to reveal a more accurate physical picture by accurately calculating the electron - phonon coupling strength and scattering rate. 4. **Expected Results**: - Provide a microscopic picture of electron and phonon dynamics through detailed spectral information. - Provide a theoretical basis for nanostructure design to decouple electron and phonon transport, thereby enhancing the thermoelectric performance of PbTe. In summary, this paper aims to deeply understand the electron transport characteristics in PbTe through parameter - free first - principles calculations and provide theoretical support for optimizing its thermoelectric performance.

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