Impedance and electrical properties of Cu doped ZnO thin films

P. Samarasekara,Udumbara Wijesinghe,E.N. Jayaweera

DOI: https://doi.org/10.48550/arXiv.1703.02030

2017-03-05

Abstract:Cu doped transparent ZnO thin films were spin coated on conductive glass substrates. The samples were subsequently annealed in air for 1 hour at 500 0C in order to form the phase of ZnO. ZnO samples were doped with different Cu molar percentages up to 5%. The impedance and photovoltaic properties of sample were measured. Photocurrent and photovoltage of doped and undoped samples were measured in KI/I2 electrolyte. Adding a trace amount of Cu improved the conducting properties of ZnO samples without changing other basic properties of ZnO. The photocurrent gradually increases with the doping concentration due to the high conducting properties of Cu. Investigation was carried out only up to the doping concentration of 5%, because higher doping concentrations may significantly influence the other properties of ZnO such as transparence of the film. Impedance of samples was determined by fitting the data to an equivalent circuit. The impedance reaches the maximum value at Cu concentrations of 3%.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: to improve the electrical and photoelectric properties of zinc oxide (ZnO) thin films by doping copper (Cu), while maintaining their transparency and other basic characteristics. Specifically, the researchers focus on the following aspects:

1. **Improving conductivity**: By adding different concentrations of Cu to ZnO, the researchers hope to find a method that can significantly improve its conductivity without changing other basic properties of ZnO.

2. **Optimizing the performance of optoelectronic devices**: The researchers measured the photocurrent and photovoltage of doped and undoped samples to evaluate the effect of Cu doping on the performance of ZnO thin films in KI/I₂ electrolyte in optoelectronic devices. They found that as the Cu doping concentration increases, the photocurrent gradually increases, while the photovoltage decreases.

3. **Determining the optimal doping concentration**: In order to ensure that the transparency and other physicochemical properties of ZnO thin films are not affected, the researchers only studied the Cu doping concentration up to 5%, and found that when the Cu doping concentration is 3%, the impedance of the thin film reaches the maximum value, indicating that the conductivity is optimal at this time.

4. **Understanding the doping mechanism**: By analyzing the impedance spectrum and equivalent circuit model, the researchers explained how Cu doping affects the electrical behavior of ZnO thin films. At low - concentration Cu doping, Cu ions as acceptor impurities increase the resistance; while at high concentrations, the aggregation of Cu ions at grain boundaries or interstitial positions leads to a decrease in resistance.

In summary, this paper aims to explore the effect of Cu doping on the electrical and photoelectric properties of ZnO thin films through experimental and theoretical analysis, and find the optimal Cu doping concentration, thereby providing a scientific basis for the development of high - performance ZnO - based optoelectronic devices.

### Key formulas
- **Relationship between photocurrent and photovoltage**:
\[
I_P = I_{\text{light}} - I_{\text{dark}}
\]
\[
V_P = V_{\text{light}} - V_{\text{dark}}
\]

- **Efficiency calculation formula**:
\[
\eta = \frac{P_{\text{out}}}{P_{\text{in}}} \times 100\%
\]
where \( P_{\text{out}} = V_P \times I_P \) and \( P_{\text{in}} = 25\times 10^{-3} \, \text{W} \).

These formulas are used to quantitatively describe the effect of Cu doping on the performance of ZnO thin - film optoelectronic devices.