Abstract:We theoretically propose a graphene-based adiabatic quantum pump with intrinsic spin-orbit coupling (SOC) subject to strain where two time-dependent extrinsic spin-orbit coupled barriers drive spin and charge currents. We study three differing operation modes where i) location, ii) chemical potential, and iii) SOC of the two barriers oscillate periodically and out of phase around their equilibrium states. Our results demonstrate that the amplitude of adiabatically pumped currents highly depends on the considered operation mode. We find that such a device operates with highest efficiency and in a broader range of parameters where the barriers chemical potential drives the quantum pump. Our results also reveal that by introducing strain to the system, one can suppress or enhance the charge and spin currents separately, depending on strain direction.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to regulate spin and charge pumping in graphene devices through strain. Specifically, the author proposes an adiabatic quantum pumping device based on graphene, which uses two time - dependent extrinsic spin - orbit coupling (SOC) barriers to drive spin and charge currents. The focus of the study is to explore different operating modes (such as the periodic oscillation of position, chemical potential, and spin - orbit coupling strength) and the influence of strain on these currents. ### Main problems and goals 1. **Propose a new - type quantum pumping device**: - The author proposes a quantum pumping device based on graphene, which has intrinsic spin - orbit coupling and is affected by strain. - This device is driven by two time - dependent extrinsic spin - orbit coupling barriers to generate controllable spin and charge pumping currents. 2. **Study the current characteristics under different operating modes**: - Three different operating modes are studied: i) the position of the barrier, ii) the chemical potential, iii) the periodic oscillation of the spin - orbit coupling strength. - Explore the amplitude of the pumping current and its dependence in these operating modes. 3. **The influence of strain on spin and charge currents**: - Study how in - plane strain (along the zigzag and armchair directions) enhances or suppresses spin and charge currents respectively. - Reveal the different effects of the strain direction on spin and charge currents, providing a theoretical basis for regulating spintronic devices. ### Formulas and models The Hamiltonian used in the paper describes the low - energy behavior of quasiparticles in single - layer graphene under tension, including intrinsic and extrinsic spin - orbit coupling: \[ H = H_0 + H_{\text{ISO}} + H_{\text{ESO}} \] where: \[ H_0 = v_F (p_x \sigma_x + p_y \sigma_y) + \mu(x) \mathbb{I} \] \[ H_{\text{ISO}} = \beta \sigma_z \] \[ H_{\text{ESO}} = \alpha (\sigma_x p_y - \sigma_y p_x) \] Here, \(v_F\) is the Fermi velocity, \(p_x\) and \(p_y\) are momentum operators, \(\sigma_i\) are Pauli matrices, \(\mu(x)\) is an adjustable chemical potential, and \(\beta\) and \(\alpha\) are the strengths of intrinsic and extrinsic spin - orbit coupling respectively. ### Conclusion The author's research shows that by adjusting the strain direction and strength of the graphene layer, spin and charge currents can be effectively controlled and manipulated. Especially in the chemical potential - driven operating mode, this device exhibits the highest efficiency and a wider parameter range. In addition, the application of strain makes it possible to simultaneously enhance the spin current and suppress the charge current, which provides new ideas for developing high - performance spintronic devices. ### References The paper cites a large number of relevant literature in the field, covering research results in spintronics, physical properties of graphene, quantum transport, etc.

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