Radiation damage of InGaAs avalanche photodiode under gamma ray irradiation
Rui Li,Yudong Li,Heini Maliya,Xin Wang,Kai Huang,Ruiqin Zhang,Yi Jiang,Qi Guo
DOI: https://doi.org/10.1016/j.infrared.2024.105393
IF: 2.997
2024-06-07
Infrared Physics & Technology
Abstract:The γ-ray irradiation characteristics of InGaAs avalanche photodiode (APD) in a space radiation environment have been comprehensively investigated through an in-depth study. The results show that γ-ray can cause the dark current and low frequency noise of InGaAs APD to increase, while the avalanche breakdown characteristics, multiplication gain, spectral response and capacitance of the device are less affected by irradiation, and almost no obvious changes occur, which suggests that these parameters are insensitive to ionizing radiation. In addition, the activation energy of the device under different bias voltages is significantly increased by the ionization damage after irradiation. Finally, the annealing experiments at different temperatures after irradiation were carried out. The results show that the interface state induced by radiation is the main factor affecting the increase of dark current of InGaAs APD. It is found that the interface state induced by radiation is the main factor leading to the increase of dark current, low frequency noise and activation energy of InGaAs APD. Reducing the interface state can improve the device's ability to inhibit ionizing radiation damage.
optics,physics, applied,instruments & instrumentation