Bi-mode electrolyte-gated synaptic transistor via additional ion doping and its application to artificial nociceptors

Rengjian Yu,Yujie Yan,Enlong Li,Xiaomin Wu,Xianghong Zhang,Jinwei Chen,Yuanyuan Hu,Huipeng Chen,Tailiang Guo
DOI: https://doi.org/10.1039/d1mh01061a
IF: 13.3
2021-01-01
Materials Horizons
Abstract:This work proposed a bi-mode electrolyte-gated synaptic transistor. Benefiting from two controllable dynamic processes, this device could achieve multilevel modulation of sensitivity, which can serve as a stable artificial nociceptor.
materials science, multidisciplinary,chemistry
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