Abstract:The great obstacle for practical applications of the quantum anomalous Hall (QAH) effect is the lack of suitable QAH materials (Chern insulators) with large non-trivial band gap, room-temperature magnetic order and high carrier mobility. The Nickle chloride (NiCl3) monolayer characteristics are investigated herein using first-principles calculations. It is reported that NiCl3 monolayers constitute a new class of Dirac materials with Dirac spin-gapless semiconducting and high-temperature ferromagnetism (~400K). Taking into account the spin-orbit coupling, the NiCl3 monolayer becomes an intrinsic insulator with a large non-trivial band gap of ~24 meV, corresponding to an operating temperature as high as ~280K at which the quantum anomalous Hall effect could be observed. The calculated large non-trivial gap, high Curie temperature and single-spin Dirac states reported herein for the NiCl3 monolayer lead us to propose that this material give a great promise for potential realization of a near-room temperature QAH effect and potential applications in spintronics. Last but not least the calculated Fermi velocities of Dirac fermion of about 4x105 m/s indicate very high mobility in NiCl3 monolayers.

What problem does this paper attempt to address?

This paper aims to solve the key problems in the practical application of Quantum Anomalous Hall (QAHE) materials. Specifically, the paper conducts research on the following challenges: 1. **Lack of suitable QAHE materials**: The QAHE materials currently realized in experiments usually require extremely low temperatures (such as below 30 mK), which limits their practical applications. Therefore, finding QAHE materials that can work at higher temperatures is an important research direction. 2. **Size of non - trivial energy gap**: In order to observe QAHE at a relatively high temperature, the material needs to have a large non - trivial energy gap. The energy gaps of many existing materials are small and cannot meet this requirement. 3. **Curie Temperature (\(T_c\))**: The Curie temperature of the material needs to be high enough to ensure that the magnetic order state can still be maintained at a relatively high temperature. This is crucial for realizing QAHE at high temperatures. 4. **Carrier mobility**: High carrier mobility is very important for improving the electrical conductance performance of the material and reducing energy consumption. Through first - principles calculations, the paper studies the properties of monolayer nickel chloride (NiCl\(_3\)) and finds that it has the following advantages: - **Dirac spin - gapless semiconductor characteristics**: The NiCl\(_3\) monolayer shows a linear dispersion relationship in the spin - up channel, while there is a band gap in the spin - down channel. This unique electronic structure makes it a potential high - speed spin - filter material. - **High - temperature ferromagnetism**: The NiCl\(_3\) monolayer still maintains ferromagnetism near room temperature (about 400 K), which means it can work at a relatively high temperature. - **Large non - trivial energy gap**: After considering Spin - Orbit Coupling (SOC), the energy gap of the NiCl\(_3\) monolayer is about 24 meV, and the corresponding operating temperature is as high as 280 K, which is sufficient to observe QAHE. - **High mobility**: The calculated Fermi velocity is about 4 × 10\(^5\) m/s, indicating that the NiCl\(_3\) monolayer has a very high carrier mobility. In summary, through systematic research, the paper proposes that the NiCl\(_3\) monolayer is a material with the potential to realize the near - room - temperature QAHE effect and has broad application prospects in the field of spintronics.

NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator

Quantum anomalous Hall effect with a high and tunable Chern number in monolayer NdN 2

Quantum Anomalous Hall Effect in a Stable 1T-Yn2monolayer with a Large Nontrivial Bandgap and a High Chern Number

The Quantum Anomalous Hall Effect with Tunable Chern Numbers in High-temperature 1T-PrN 2 Monolayer

Tunable high Chern-number quantum anomalous Hall effect through interlayer ferromagnetic coupling in two-dimensional ferromagnet NiSbO3

Atomically Dispersed Tungsten on Metal Halide Monolayer As a Ferromagnetic Chern Insulator

Monolayer Chromium Dichloride: an Anti-Ferromagnetic Semiconductor with a High Néel Temperature above Room Temperature

Two Dimensional Antiferromagnetic Chern Insulator NiRuCl6

Prediction of Monolayered Ferromagnetic CrMnI6 As an Intrinsic High-Temperature Quantum Anomalous Hall System

Large-gap Quantum Anomalous Hall States Induced by Functionalizing Buckled Bi-III Monolayer/al$_{2}$o$_{3}$

Intrinsic Quantum Anomalous Hall Effect with In-Plane Magnetization: Searching Rule and Material Prediction.

Chern-insulator phase in antiferromagnets

High-temperature Quantum Anomalous Hall Insulator in Two-Dimensional Bi2ON

Two-dimensional kagome lattice Zn 2 N 3 as an intrinsic magnetic topological insulator for quantum anomalous Hall effect

High-Temperature Quantum Anomalous Hall Insulators in Lithium-Decorated Iron-Based Superconductor Materials

The Dirac Half-Semimetal and Quantum Anomalous Hall Effect in Two-Dimensional Janus Mn2X3Y3 (X, Y = F, Cl, Br, I).

High-temperature and multichannel quantum anomalous Hall effect in pristine and alkali-metal-doped CrBr<sub>3</sub>monolayers

Insight into the Quantum Anomalous Hall States in Two-Dimensional Kagome Cr3Se4 and Fe3S4 Monolayers

High-performance quantum anomalous Hall effect in monolayer Ti2Sb2KRb and Ti2Bi2NaK

Quantum Anomalous Hall Effect by Coupling Heavy Atomic Layers with CrI_3

Chern number transition of quantum anomalous hall phases in kagome TM<sub>3</sub>Te<sub>4</sub> (TM = Ti, Cr) monolayers by manipulating magnetization orientation