Impact of built-in fields and contact configuration on the characteristics of ultra-thin GaAs solar cells

Urs Aeberhard

DOI: https://doi.org/10.1063/1.4959244

2016-06-13

Abstract:We discuss the effects of built-in fields and contact configuration on the photovoltaic characteristics of ultrathin GaAs solar cells. The investigation is based on advanced quantum-kinetic simulations reaching beyond the standard semi-classical bulk picture concerning the consideration of charge carrier states and dynamics in complex potential profiles. The thickness dependence of dark and photocurrent in the ultra-scaled regime is related to the corresponding variation of both, the built-in electric fields and associated modification of the density of states, and the optical intensity in the films. Losses in open-circuit voltage and short-circuit current due to leakage of electronically and optically injected carriers at minority carrier contacts are investigated for different contact configurations including electron and hole blocking barrier layers. The microscopic picture of leakage currents is connected to the effect of finite surface recombination velocities in the semi-classical description, and the impact of these non-classical contact regions on carrier generation and extraction is analyzed.

Mesoscale and Nanoscale Physics,Materials Science,Optics

What problem does this paper attempt to address?

The problems that this paper attempts to solve are: **The influence of the built - in electric field and contact configuration on the photovoltaic characteristics of ultra - thin gallium arsenide (GaAs) solar cells**. Specifically, the author focuses on the influence of the strong built - in electric field and non - classical contact regions due to the decrease in the thickness of the absorption layer on the carrier generation, transport and recombination processes in the ultra - thin structure. These problems are often ignored or simplified in traditional semi - classical simulation methods, while these factors become particularly important in ultra - thin devices.

### Main research contents include:

1. **Influence of the built - in electric field**:
- The doping - induced built - in potential in the traditional single - junction p - i - n structure is close to the band - gap energy under short - circuit conditions, while in the ultra - thin structure, this built - in electric field will become very strong.
- The strong built - in electric field will affect the absorption and emission characteristics (such as the Franz - Keldysh effect), thus affecting the photovoltaic performance.

2. **Influence of the contact configuration**:
- Introduce an electron blocking layer (EBL) and a hole blocking layer (HBL) to improve the selectivity of the contact and reduce the leakage of minority carriers.
- The non - classical behavior in the contact region (such as the surface recombination velocity) has a significant impact on the open - circuit voltage (VOC) and the short - circuit current (JSC).

3. **Quantum - kinetic simulation**:
- Use the non - equilibrium Green's function (NEGF) framework for quantum - kinetic simulation, considering the influence of the strong electric field and nanostructure on the carrier state and kinetics.
- Compare with the traditional semi - classical drift - diffusion model (such as ASA) to reveal the differences between them.

### Research significance:

By in - depth study of the influence of the built - in electric field and contact configuration on ultra - thin GaAs solar cells, the author aims to provide a more comprehensive and accurate theoretical framework for the design and optimization of ultra - thin photovoltaic devices. This helps to overcome the limitations of traditional simulation methods in ultra - thin structures and provides guidance for the development of future high - efficiency solar cells.

### Explanation of key formulas and charts:

- **Built - in electric field strength**: As the thickness of the absorption layer decreases, the built - in electric field strength \( E_{\text{built - in}} \) increases.
- **Absorption coefficient**: \( \alpha(E_\gamma) \), which represents the absorptivity at photon energy \( E_\gamma \).
- **Emissivity**: \( R(E_\gamma) \), which represents the emissivity at photon energy \( E_\gamma \).
- **Dark current density**: \( J_{\text{dark}}(V_{\text{bias}}) \), which represents the dark current at different bias voltages \( V_{\text{bias}} \).
- **Photocurrent density**: \( J_{\text{ph}}(V_{\text{bias}}, E_\gamma, I_\gamma) \), which represents the photocurrent under illumination conditions.

These formulas and charts show the influence of the built - in electric field and contact configuration on the photovoltaic characteristics, especially the changes in the absorption, emission and carrier extraction processes.