Dynamic electrical behavior of halide perovskite based solar cells

George Alexandru Nemnes,Cristina Besleaga,Andrei Gabriel Tomulescu,Ioana Pintilie,Lucian Pintilie,Kristinn Torfason,Andrei Manolescu

DOI: https://doi.org/10.1016/j.solmat.2016.09.012

2016-09-15

Abstract:A dynamic electrical model is introduced to investigate the hysteretic effects in the I-V characteristics of perovskite based solar cells. By making a simple ansatz for the polarization relaxation, our model is able to reproduce qualitatively and quantitatively detailed features of measured I-V characteristics. Pre-poling effects are discussed, pointing out the differences between initially over- and under-polarized samples. In particular, the presence of the current over-shoot observed in the reverse characteristics is correlated with the solar cell pre-conditioning. Furthermore, the dynamic hysteresis is analyzed with respect to changing the bias scan rate, the obtained results being consistent with experimentally reported data: the hysteresis amplitude is maximum at intermediate scan rates, while at very slow and very fast ones it becomes negligible. The effects induced by different relaxation time scales are assessed. The proposed dynamic electrical model offers a comprehensive view of the solar cell operation, being a practical tool for future calibration of tentative microscopic descriptions.

Materials Science

What problem does this paper attempt to address?

This paper attempts to address the problem of dynamic electrical behavior in halide perovskite solar cells, especially the hysteresis effects that occur in the J - V (current - voltage) characteristics. Specifically, the main research questions include:

1. **Origin of the hysteresis effect**: Why do halide perovskite solar cells show significant differences in the J - V characteristic curves in different scanning directions (forward and reverse)? Which physical mechanisms are related to this hysteresis effect?

2. **Pre - polarization effect**: What are the effects of initial over - polarization and under - polarization on the J - V characteristics? How do these effects influence the performance of solar cells?

3. **Influence of the scanning rate**: How does different bias scan rate (BSR) affect the hysteresis effect? Why does the hysteresis effect become less obvious at very slow or very fast scanning rates?

4. **Influence of the relaxation time scale**: What are the effects of different relaxation time scales on the hysteresis effect? How can the experimentally observed phenomena be explained by changing the relaxation time?

To answer these questions, the author introduced a dynamic electrical model and simulated and explained the experimental data by assuming a polarization relaxation process. This model can qualitatively and quantitatively reproduce the measured J - V characteristics and provides a comprehensive understanding of the operating mechanism of solar cells.

### Key formulas
Some of the key formulas mentioned in the paper are as follows:

- Current - voltage relationship:
\[
I_{ph} = I_d + I_{sh} + I_c + I
\]
where \(I\) is the current in the external circuit, \(I_d\) is the diode current, \(I_{sh}\) is the shunt resistance current, and \(I_c\) is the capacitance current.

- Diode current:
\[
I_d = I_s \left( e^{\frac{V + IR_s}{n k_B T}} - 1 \right)
\]
where \(I_s\) is the reverse saturation current of the diode, \(n\) is the ideality factor, \(k_B\) is the Boltzmann constant, and \(T\) is the temperature.

- Capacitance current:
\[
I_c = C_0 \frac{dU_c(t)}{dt} + A \frac{dP_{nl}(t)}{dt}
\]
where \(C_0\) is the geometric capacitance, \(A\) is the device area, and \(P_{nl}(t)\) is the nonlinear polarization.

- Polarization relaxation equation:
\[
\frac{dP_{nl}}{dt} = \frac{P_{nl,\infty}(U_c(t)) - P_{nl}(t)}{\tau}
\]
where \(P_{nl,\infty}\) is the steady - state polarization and \(\tau\) is the relaxation time.

Through these formulas, the author can simulate the J - V characteristics under different conditions and explain various phenomena observed in the experiment.