Phonon lasing as a likely mechanism for density-dependent velocity saturation in GaN transistors

Jacob B. Khurgin,Sanyam Bajaj,Siddharth Rajan

DOI: https://doi.org/10.7567/APEX.9.094101

2016-02-08

Abstract:We show that density-dependent velocity saturation in a GaN High Electron Mobility Transistor (HEMT) can be related to the stimulated emission of longitudinal optical (LO) phonons. As the drift velocity of electrons increases, the drift of the Fermi distribution in reciprocal space produces population inversion and gain for the LO phonons. Once this gain reaches a threshold value, the avalanche-like increase of LO emission causes a rapid loss of electron energy and momentum and leads to drift velocity saturation. Our simple model correctly predicts both the general trend of the saturation velocity decreasing with increasing electron density and the values of saturation velocity measured in our experiments.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the mechanism of electron drift velocity saturation in gallium nitride high - electron - mobility transistors (GaN HEMT). Specifically, the authors focus on how electron drift velocity saturation in GaN HEMT occurs at different electron densities and why this saturation velocity decreases as the electron density increases. This problem is crucial for understanding and optimizing the performance of GaN HEMT in high - frequency and high - power applications.

The paper proposes a new mechanism, namely **phonon lasing**, to explain this phenomenon. When the electron drift velocity in GaN HEMT increases, the shift of the Fermi distribution function in the reciprocal space will lead to the stimulated emission of longitudinal - optical (LO) phonons. Once this stimulated emission reaches a certain threshold, the emission amount of LO phonons will increase sharply, resulting in a rapid loss of electron energy and momentum, thereby causing the saturation of the drift velocity. By establishing a simple model, the authors successfully predicted the trend and value of the saturation velocity varying with the electron density as observed in the experiment.

This model can not only explain the phenomenon of electron drift velocity saturation in GaN HEMT, but also provides a new perspective for understanding similar problems in other group - III nitride semiconductor devices. In addition, the paper also discusses how to control or prevent "phonon lasing" by introducing an additional LO phonon scattering mechanism to improve the performance of group - III nitride HEMT.