Abstract:Control of impurity concentrations in semiconducting materials is essential to device technology. Because of their intrinsic confinement, the properties of two-dimensional semiconductors such as transition metal dichalcogenides (TMDs) are more sensitive to defects than traditional bulk materials. The technological adoption of TMDs is dependent on the mitigation of deleterious defects and guided incorporation of functional foreign atoms. The first step toward impurity control is the identification of defects and assessment of their electronic properties. Here, we present a comprehensive study of point defects in monolayer tungsten disulfide (WS2) grown by chemical vapor deposition using scanning tunneling microscopy/spectroscopy, CO-tip noncontact atomic force microscopy, Kelvin probe force spectroscopy, density functional theory, and tight-binding calculations. We observe four different substitutional defects: chromium (CrW) and molybdenum (MoW) at a tungsten site, oxygen at sulfur sites in both top and bottom layers (OS top/bottom), and two negatively charged defects (CD type I and CD type II). Their electronic fingerprints unambiguously corroborate the defect assignment and reveal the presence or absence of in-gap defect states. CrW forms three deep unoccupied defect states, two of which arise from spin-orbit splitting. The formation of such localized trap states for CrW differs from the MoW case and can be explained by their different d shell energetics and local strain, which we directly measured. Utilizing a tight-binding model the electronic spectra of the isolectronic substitutions OS and CrW are mimicked in the limit of a zero hopping term and infinite on-site energy at a S and W site, respectively. The abundant CDs are negatively charged, which leads to a significant band bending around the defect and a local increase of the contact potential difference. In addition, CD-rich domains larger than 100 nm are observed, causing a work function increase of 1.1 V. While most defects are electronically isolated, we also observed hybrid states formed between CrW dimers. The important role of charge localization, spin-orbit coupling, and strain for the formation of deep defect states observed at substitutional defects in WS2 as reported here will guide future efforts of targeted defect engineering and doping of TMDs.

Non-stoichiometry and Defects in the Weyl Semimetals TaAs, TaP, NbP, and NbAs

First-principles calculations for the effect of energetic point defect formation on electronic properties of the Weyl MX family (M = Nb, Ta; X = P, As)

First-principles calculations for the effect of energetic point defect formation on electronic properties of the Weyl MX family (M = Nb, Ta; X = P, As)

How Substitutional Point Defects in Two-Dimensional WS2 Induce Charge Localization, Spin-Orbit Splitting, and Strain.

An ab-initio study on structural, elastic, electronic, bonding, thermal, and optical properties of topological Weyl semimetal TaX (X = P, As)

Crystal growth and transport properties of Weyl semimetal TaAs

Influence of Structural Defects on Charge Density Waves in 1T-TaS2

Fermi Surface Interconnectivity and Topology in Weyl Fermion Semimetals Taas, Tap, Nbas, and Nbp

Structural, elastic, electronic, bonding, thermal, and optical properties of topological Weyl semimetal TaX (X = P, As): Insights from ab-initio calculations

High-pressure phases of Weyl semimetals NbP, NbAs, TaP and TaAs

Thin film TaAs: developing a platform for Weyl semimetal devices

Hexagonal Phase Intergrown with the Tetragonal Weyl Semimetal Taas

Comparative Raman study of Weyl semimetals TaAs, NbAs, TaP and NbP.

Exploration of growth conditions of TaAs Weyl semimetal thin film using pulsed laser deposition

Discovery of a Weyl Semimetal in Non-Centrosymmetric Compound TaAs

Exploration of growth conditions of TaAs Weyl semimetal thin film by pulsed laser deposition

A Weyl Fermion Semimetal with Surface Fermi Arcs in the Transition Metal Monopnictide TaAs Class

Exploring Native Atomic Defects in NiTe2

Experimental realization of a Weyl semimetal phase with Fermi arc surface states in TaAs

Crystal Growth and Electrical Transport Properties of Niobium and Tantalum Monopnictide and Dipnictide Semimetals

Scanning Tunneling Microscopy Examinations of the Effects of Defects on the Charge Density Wave Order in the Chemical Vapor Deposition-Derived TaSe2 on Au Foils