Abstract:X-ray SOI pixel sensors, "XRPIX", are being developed for the next-generation X-ray astronomical satellite, "FORCE". The XRPIX are fabricated with the SOI technology, which makes it possible to integrate a high-resistivity Si sensor and a low-resistivity Si CMOS circuit. The CMOS circuit in each pixel is equipped with a trigger function, allowing us to read out outputs only from the pixels with X-ray signals at the timing of X-ray detection. This function thus realizes high throughput and high time resolution, which enables to employ anti-coincidence technique for background rejection. A new series of XRPIX named XRPIX6E developed with a pinned depleted diode (PDD) structure improves spectral performance by suppressing the interference between the sensor and circuit layers. When semiconductor X-ray sensors are used in space, their spectral performance is generally degraded owing to the radiation damage caused by high-energy protons. Therefore, before using an XRPIX in space, it is necessary to evaluate the extent of degradation of its spectral performance by radiation damage. Thus, we performed a proton irradiation experiment for XRPIX6E for the first time at HIMAC in the NIRS. We irradiated XRPIX6E with high-energy protons with a total dose of up to 40 krad, equivalent to 400 years of irradiation in orbit. The 40-krad irradiation degraded the energy resolution of XRPIX6E by 25 $\pm$ 3%, yielding an energy resolution of 260.1 $\pm$ 5.6 eV at the full width half maximum for 5.9 keV X-rays. However, the value satisfies the requirement for FORCE, 300 eV at 6 keV, even after the irradiation. It was also found that the PDD XRPIX has enhanced radiation hardness compared to previous XRPIX devices. In addition, we investigated the degradation of the energy resolution; it was shown that the degradation would be due to increasing energy-independent components, e.g., readout noise.

Fine-pitch semiconductor detector for the FOXSI mission

The Focusing Optics X-ray Solar Imager (FOXSI)

High-speed Readout System of X-ray CMOS Image Sensor for Time Domain Astronomy

Silicon drift detectors for the Spectroscopy Focusing Array of eXTP

FOXSI-2: Upgrades of the Focusing Optics X-ray Solar Imager for its Second Flight

Evaluation of the X-ray SOI pixel detector with the on-chip ADC

Imaging and Spectral Performance of a 60 μm Pitch CdTe Double-Sided Strip Detector

Design study and spectroscopic performance of SOI pixel detector with a pinned depleted diode structure for X-ray astronomy

Prototype readout electronics of a double-sided silicon strip detector for space exploration

Sub-pixel Response of Double-SOI Pixel Sensors for X-ray Astronomy

Performance of SOI Pixel Sensors Developed for X-ray Astronomy

Improvement of Spectroscopic Performance using a Charge-sensitive Amplifier Circuit for an X-Ray Astronomical SOI Pixel Detector

Performance of a focal plane detector for soft X-ray imaging spectroscopy based on back-illuminated sCMOS

Performance of the Silicon-On-Insulator Pixel Sensor for X-ray Astronomy, XRPIX6E, Equipped with Pinned Depleted Diode Structure

Development of a 32-channel ASIC for an X-ray APD Detector onboard the ISS

Development of high-speed X-ray imaging system for SOI pixel detector

X-ray Radiation Damage Effects on Double-SOI Pixel Detectors for the Future Astronomical Satellite "FORCE"

Investigation of the Kyoto's X-ray Astronomical SOIPIXs with Double-SOI Wafer for Reduction of Cross-talks

Proton radiation hardness of X-ray SOI pixel sensors with pinned depleted diode structure

X-ray imaging camera using INTPIX4NA SOIPIX detector with SiTCP-XG 10GbE based high-speed readout system