Abstract:We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This effect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite different, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.

What problem does this paper attempt to address?

This paper aims to solve the problems of charge transport characteristics and nonlinear response of graphene in relatively high electric field intensities (on the order of about 10 kV/cm) at terahertz (THz) frequencies. Specifically, the researchers attempt to understand how the Fermi level of graphene affects its nonlinear THz transport characteristics under these conditions and the physical mechanisms behind these characteristics. ### Main problems: 1. **Nonlinear response under high electric fields**: Under high - electric - field conditions, graphene exhibits significant nonlinear behavior, such as an increase in field - induced transparency, which is closely related to the Fermi level. 2. **Differences in different samples**: The performance of single - layer and multi - layer graphene on different substrates (sapphire and quartz) was studied to explore the influence of different forms of low - field impurity scattering (short - range neutral - impurity scattering and long - range charged - impurity scattering) on transport characteristics. 3. **Explanation of transport mechanisms**: By introducing the free - carrier Drude model, combined with neutral - impurity scattering, charged - impurity scattering and optical - phonon scattering, the observed nonlinear transport phenomena were explained. 4. **Influence of temperature effects**: The influence of electron temperature and lattice temperature on scattering time was explored, and it was analyzed whether these factors could fully explain the nonlinear behavior observed in the experiment. ### Research methods: - **Experimental design**: Ion gels were used as top - gate materials. By applying different gate voltages to regulate the Fermi level of graphene, and using high - intensity THz pulses to measure transport characteristics. - **Theoretical modeling**: Based on the Drude model, combined with different scattering mechanisms (such as neutral - impurity scattering, charged - impurity scattering, optical - phonon scattering, etc.), a theoretical model for describing THz transport characteristics was established. ### Key findings: - Under high - electric - field conditions, as the electric field intensity increases, the THz transmission of graphene increases, which is caused by the intra - band absorption bleaching effect. - The scattering time at different Fermi levels varies significantly with the change of electric field intensity, especially when approaching the charge neutral point, the scattering time decreases sharply. - The experimental results show that this nonlinear behavior cannot be explained only by the increase in lattice temperature, and may involve more complex scattering mechanisms, such as optical - phonon scattering or carrier - carrier scattering. In conclusion, this study provides new insights into understanding the transport characteristics of graphene at THz frequencies and under high - electric - field conditions, which is of great significance for the future development of efficient THz devices.

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