High field response of gated graphene at THz frequencies

Hadi Razavipour,Hassan A. Hafez,Ibraheem Al-Naib,Wayne Yang,Pierre Lévesque,Abdeladim Guermoune,Francois Blanchard,Xin Chai,Denis Ferachou,Richard Martel,Michael Hilke,Marc M. Dignam,Tsuneyuki Ozaki,David G. Cooke

DOI: https://doi.org/10.1103/PhysRevB.92.245421

2015-08-04

Abstract:We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This effect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite different, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.

Mesoscale and Nanoscale Physics,Materials Science