Abstract:Today's electronics uses electron charge as a state variable for logic and computing operation, which is often represented as voltage or current. In this representation of state variable, carriers in electronic devices behave independently even to a few and single electron cases. As the scaling continues to reduce the physical feature size and to increase the functional throughput, two most outstanding limitations and major challenges, among others, are power dissipation and variability as identified by ITRS. This paper presents the expose, in that collective phenomena, e.g., spintronics using appropriate order parameters of magnetic moment as a state variable may be considered favorably for a new room-temperature information processing paradigm. A comparison between electronics and spintronics in terms of variability, quantum and thermal fluctuations will be presented. It shows that the benefits of the scalability to smaller sizes in the case of spintronics (nanomagnetics) include a much reduced variability problem as compared with today's electronics. In addition, another advantage of using nanomagnets is the possibility of constructing nonvolatile logics, which allow for immense power savings during system standby. However, most of devices with magnetic moment usually use current to drive the devices and consequently, power dissipation is a major issue. We will discuss approaches of using electric-field control of ferromagnetism in dilute magnetic semiconductor (DMS) and metallic ferromagnetic materials. With the DMSs, carrier-mediated transition from paramagnetic to ferromagnetic phases make possible to have devices work very much like field effect transistor, plus the non-volatility afforded by ferromagnetism. Then we will describe new possibilities of the use of electric field for metallic materials and devices: Spin wave devices with multiferroics materials. We will also further describe a potential new method of electric field control of metallic ferromagnetism via field effect of the Thomas Fermi surface layer.

Addressing the Challenges of Using Ferromagnetic Electrodes in the Molecular Spintronics Devices

Fabrication of multilayer edge molecular electronics and spintronics devices

Nonvolatile Electrical Control Of 2d Cr2ge2te6 And Intrinsic Half Metallicity In Multiferroic Hetero-Structures

Monte Carlo Study of a wide range of Molecular Spintronics Devices

Antiferromagnetic Spintronics in Magnetic Memory Devices

Molecule Induced Strong Exchange Coupling between Ferromagnetic Electrodes of a Magnetic Tunnel Junction

Magnetic Force Microscopy Revealing Molecule Impact on Magnetic Tunnel Junction Based Molecular Devices at Room Temperature

Single-Crystalline Nanowires of Molecular Ferroelectric Semiconductors for Optoelectronic Memory

All-antiferromagnetic electrically controlled memory on silicon featuring large tunneling magnetoresistance

Magnetoelectric Memory Based on Ferromagnetic/Ferroelectric Multiferroic Heterostructure

Integration of amorphous ferromagnetic oxides with multiferroic materials for room temperature magnetoelectric spintronics

From Nanoelectronics to Nano-Spintronics.

Room temperature current suppression on multilayer edge molecular spintronics device

Electrical Control of Anisotropic Ferromagnetic Domains During Antiferromagnetic-Ferromagnetic Phase Transition

Harnessing ferroic ordering in thin film devices for analog memory and neuromorphic computing applications down to deep cryogenic temperatures

Surface-spin driven room temperature magnetic memory effect in Fe-substituted NiO nanoparticles

Mn4N ferrimagnetic thin films for sustainable spintronics

Ferrimagnets for spintronic devices: From materials to applications

Efficient Spin‐Orbit Torque Switching of Perpendicular Magnetization using Topological Insulators with High Thermal Tolerance

Tunable Magnetoelectric Nonvolatile Memory Devices Based on SmFeO3/P(VDF-TrFE) Nanocomposite Films

Large Resistance Change on Magnetic Tunnel Junction based Molecular Spintronics Devices