Comment on "Selective Interface Control of Order Parameters in Complex Oxides" (<a class="link-https" data-arxiv-id="1505.07451" href="https://arxiv.org/abs/1505.07451">arXiv:1505.07451</a>)

Y. Lu,E. Benckiser,B. Keimer

DOI: https://doi.org/10.48550/arXiv.1506.02787

2015-06-09

Abstract:We show that the experimental evidence presented in this paper is insufficient to support its conclusions.

Strongly Correlated Electrons

What problem does this paper attempt to address?

Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

D. Meyers,Jian Liu,J. W. Freeland,S. Middey,M. Kareev,Jin‐Won Kwon,Jian‐Min Zuo,Yi‐De Chuang,Jong Woo Kim,Philip J. Ryan,J. Chakhalian

DOI: https://doi.org/10.1038/srep27934

IF: 4.6

2016-01-01

Scientific Reports

Abstract:In complex materials observed electronic phases and transitions between them often involve coupling between many degrees of freedom whose entanglement convolutes understanding of the instigating mechanism. Metal-insulator transitions are one such problem where coupling to the structural, orbital, charge and magnetic order parameters frequently obscures the underlying physics. Here, we demonstrate a way to unravel this conundrum by heterostructuring a prototypical multi-ordered complex oxide NdNiO 3 in ultra thin geometry, which preserves the metal-to-insulator transition and bulk-like magnetic order parameter, but entirely suppresses the symmetry lowering and long-range charge order parameter. These findings illustrate the utility of heterointerfaces as a powerful method for removing competing order parameters to gain greater insight into the nature of the transition, here revealing that the magnetic order generates the transition independently, leading to an exceptionally rare purely electronic metal-insulator transition with no symmetry change.
Comment on "Extension of Rietveld Refinement for Benchtop Powder XRD Analysis of Ultrasmall Supported Nanoparticles" by J. Lipp et al. (Chem. Mater. 2022, 34, 18, 8091-8111)

Zbigniew Kaszkur

DOI: https://doi.org/10.48550/arXiv.2212.10434

2022-12-20

Materials Science

Abstract:The comment gives principal arguments proving that the claims given in the title of the commented paper and some its conclusions have to be wrong for principal reasons. An example illustrating the arguments is provided via atomistic simulation.
Control of lectronic onduction at an xide eterointerface using olar dsorbates

Yanwu Xie,Yasuyuki Hikita,Christopher Bell,Harold Y. Hwang

2011-01-01

Abstract:We study the effect of the surface adsorption of a variety of common laboratory solvents on the conductivity at the interface between LaAlO3 and SrTiO3. This interface possesses a range of intriguing physics, notably a proposed connection between the surface state of the LaAlO3 and the conductivity buried in the SrTiO3. We show that the application of chemicals such as acetone, ethanol, and water can induce a large change (factor of three) in the conductivity. This phenomenon is observed only for polar solvents. These data provide experimental evidence for a general polarization-facilitated electronic transfer mechanism. SLAC-PUB-14500
Sign reversal of the order parameter in (Li<sub>1−<i>

Zengyi Du,Xiong Yang,Dustin Altenfeld,Qiangqiang Gu,Huan Yang,Ilya Eremin,Peter J. Hirschfeld,Igor I. Mazin,Hai Lin,Xiyu Zhu,Hai-Hu Wen

DOI: https://doi.org/10.1038/nphys4299

IF: 19.684

2017-01-01

Nature Physics

Abstract:Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript. A Nature Research Journal
Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

hei wong,jieqiong zhang,shurong dong,kuniyuki kakushima,hiroshi iwai

DOI: https://doi.org/10.1016/j.vacuum.2015.01.028

IF: 4

2015-01-01

Vacuum

Abstract:In future nanoscale complementary metal-oxide-semiconductor (CMOS) devices, the high dielectric constant (high-k) gate dielectric film will be shrunk down to a couple of nanometers or down to the sub-nanometer range in the sense of oxide equivalent thickness (EOT). However, as high-k materials, including La2O3 which has been considered to be one of the promising next generation gate dielectric materials, are only marginally stable on the silicon substrate, some nominal temperature processes used for the device fabrication may still give rise to interface reactions and result in a low-k interface layer which will be a critical constraint for achieving the ultrathin EOT gate dielectric film. In this work, some issues related to the material interaction at the lanthanum oxide/Si and lanthanum oxide/metal interfaces will be discussed with the supports of interface bonding structures as revealed by using angle-resolved x-ray photoelectron spectroscopy (ARXPS) measurements. We show that thermal annealing at temperature above 500 °C would result in the migration of Si atoms deep into the bulk of the La2O3 film and formation of silicate phases both at the interface and in the bulk. These effects would significantly lower the dielectric constant and thus increases the effective thickness of the dielectric film from the equivalent silicon oxide thickness (EOT) point of view.
Comment on <a class="link-https" data-arxiv-id="cond-mat/0007299" href="https://arxiv.org/abs/cond-mat/0007299">cond-mat/0007299</a> by Schofield and Sandeman : inconsistency with experiments

George Kastrinakis

DOI: https://doi.org/10.48550/arXiv.cond-mat/0112478

2001-12-28

Abstract:The inconsistency of <a class="link-https" data-arxiv-id="cond-mat/0007299" href="https://arxiv.org/abs/cond-mat/0007299">cond-mat/0007299</a> and Phys. Rev. B 63 094510 (2001) with ARPES and resistivity data is pointed-out.

Strongly Correlated Electrons,Superconductivity
Comment on ``Off-stoichiometry mechanism of the isotope effect in manganites''

G. M. Zhao

DOI: https://doi.org/10.48550/arXiv.cond-mat/0112104

2001-12-07

Abstract:In a recent paper, Nagaev cited the unpublished paper by Franck et <a class="link-external link-http" href="http://al.to" rel="external noopener nofollow">this http URL</a> support his theoretical model for the mechanism of the giant isotope effect observed in La_{1-x}Ca_{x}MnO_{3+y} (x = 0.20, y > 0). His model suggests that the off-stoichiometric oxygen content depends strongly on the oxygen isotope mass, which leads to a giant oxygen-isotope effect. Here I show that his theoretical model is not consistent with any experimental results (even the results recently published by Franck et al.), and his estimate of polaronic bandwidth is wrong due to his misuse of polaronic theories.

Strongly Correlated Electrons
Reply to "Comment on 'Fano resonance for Anderson Impurity Systems' "

H. G. Luo,T. Xiang,X. Q. Wang,Z. B. Su,L. Yu

DOI: https://doi.org/10.48550/arXiv.cond-mat/0504177

2005-04-07

Strongly Correlated Electrons

Abstract:In a recent Comment, Kolf et al. (cond-mat/0503669) state that our analysis of the Fano resonance for Anderson impurity systems [Luo et al., Phys. Rev. Lett 92, 256602 (2004)] is incorrect. Here we want to point out that their comments are not based on firm physical results and their criticisms are unjustified and invalid.
Oxide interfaces: pathways to novel phenomena

pu yu,yinghao chu,r ramesh

DOI: https://doi.org/10.1016/S1369-7021(12)70137-2

IF: 24.2

2012-01-01

Materials Today

Abstract:Novel phenomena and functionalities at artificial heterointerfaces have been attracting extensive scientific attention in both materials science and fundamental condensed matter physics. The interplay between degrees of freedom at interfaces of complex oxides could lead to exotic and unexpected states of matter. In this article, using the model system of BiFeO3 and La0.7Sr0.3MnO3, we review recent progress on our understanding of the novel states formed at this heterointerface. Furthermore, we discuss how emergent interfacial phenomena can be employed to influence the bulk properties of these materials. We summarize by highlighting several possible and promising directions for future study.
Understanding interface effects in perovskite thin films

Marie-Bernadette Lepetit,Bernard Mercey,Charles Simon

DOI: https://doi.org/10.48550/arXiv.1105.0986

2011-05-05

Strongly Correlated Electrons

Abstract:The control of matter properties (transport, magnetic, dielectric,...) using synthesis as thin films is strongly hindered by the lack of reliable theories, able to guide the design of new systems, through the understanding of the interface effects and of the way the substrate constraints are imposed to the material. The present paper analyses the energetic contributions at the interfaces, and proposes a model describing the microscopic mechanisms governing the interactions at an epitaxial interface between a manganite and another transition metal oxide in perovskite structure (as for instance $\rm SrTiO_3$). The model is checked against experimental results and literature analysis.
Comment on 'A new nanoscale metastable iron phase in carbon steels'

Cyril Cayron

DOI: https://doi.org/10.48550/arXiv.1511.00591

2015-11-02

Materials Science

Abstract:We show that the selected area diffraction patterns presented in a recent paper (T. Liu et al. Sci. Rep. 2015 5, 15331) do not prove the existence of a new hexagonal phase in martensitic steels. They can be actually simulated by twin effects.
Reply to "Comment on 'Nontrivial Quantum Geometry and the Strength of Electron-Phonon Coupling',

Jiabin Yu,Christopher J. Ciccarino,Raffaello Bianco,Ion Errea,Prineha Narang,B. Andrei Bernevig

2023-06-07

Abstract:This is our reply to "Comment on 'Nontrivial Quantum Geometry and the Strength of Electron-Phonon Coupling', <a class="link-https" data-arxiv-id="2305.02340" href="https://arxiv.org/abs/2305.02340">arXiv:2305.02340</a>, J. Yu, C. J. Ciccarino, R. Bianco, I. Errea, P. Narang, B. A. Bernevig" by Prof. Pickett, which focuses on the MgB$_2$ part of our work. We show that the entirety of the criticism in Prof. Pickett's comment pertaining to our work (<a class="link-https" data-arxiv-id="2305.02340" href="https://arxiv.org/abs/2305.02340">arXiv:2305.02340</a>) is invalid.

Superconductivity
Comment on: Hysteresis phenomena in CO catalytic oxidation system in the presence of inhomogeneities of the catalyst surface. Authors' reply

V. P. Zhdanov,Da-Yin Hua,Yu-Qiang Ma

IF: 2.707

2003-01-01

Physical Review E

Abstract:Scrutinizing the Monte Carlo algorithm, used by D.-Y. Hua and Y.-Q. Ma [Phys. Rev. E 66, 066103 (2002)] in order to simulate the effect of defect sites on bistable kinetics of CO oxidation on single-crystal surfaces, we show that in their study (i) the rules for describing CO adsorption, desorption, and surface diffusion contradict the detailed balance principle and (ii) the ratio of the rates of CO diffusion and reaction between adsorbed CO and O species is opposite compared to that observed in reality.
Atomic-Scale Control of Competing Electronic Phases in Ultrathin Lanio3

P. D. C. King,H. I. Wei,Y. F. Nie,M. Uchida,C. Adamo,S. Zhu,X. He,I. Božović,D. G. Schlom,K. M. Shen

DOI: https://doi.org/10.1038/nnano.2014.59

IF: 38.3

2014-01-01

Nature Nanotechnology

Abstract:In an effort to scale down electronic devices to atomic dimensions 1 , the use of transition-metal oxides may provide advantages over conventional semiconductors. Their high carrier densities and short electronic length scales are desirable for miniaturization 2 , while strong interactions that mediate exotic phase diagrams 3 open new avenues for engineering emergent properties 4 , 5 . Nevertheless, understanding how their correlated electronic states can be manipulated at the nanoscale remains challenging. Here, we use angle-resolved photoemission spectroscopy to uncover an abrupt destruction of Fermi liquid-like quasiparticles in the correlated metal LaNiO 3 when confined to a critical film thickness of two unit cells. This is accompanied by the onset of an insulating phase as measured by electrical transport. We show how this is driven by an instability to an incipient order of the underlying quantum many-body system, demonstrating the power of artificial confinement to harness control over competing phases in complex oxides with atomic-scale precision.
Interfacial Complexions and the Related Atomic Transport Behaviors in Gold-Oxide Systems

Guo-zhen Zhu,Yong-sheng Fu,Fang Liu,An-chao Yi,Dong Yue Xie,Wei Zhou

DOI: https://doi.org/10.1017/s1431927616010370

IF: 4.0991

2016-01-01

Microscopy and Microanalysis

Abstract:Journal Article Interfacial Complexions and the Related Atomic Transport Behaviors in Gold-Oxide Systems Get access Guo-zhen Zhu, Guo-zhen Zhu State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Yong-sheng Fu, Yong-sheng Fu State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Fang Liu, Fang Liu State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar An-chao Yi, An-chao Yi State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Dong Yue Xie, Dong Yue Xie State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Wei Zhou Wei Zhou State Key Laboratory of Metal Matrix Composites, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P. R. China Search for other works by this author on: Oxford Academic Google Scholar Microscopy and Microanalysis, Volume 22, Issue S3, 1 July 2016, Pages 1906–1907, https://doi.org/10.1017/S1431927616010370 Published: 25 July 2016
Correction: Control of selectivity in allylic alcohol oxidation on gold surfaces: the role of oxygen adatoms and hydroxyl species

Gregory M. Mullen,Liang Zhang,Edward J. Evans,Ting Yan,Graeme Henkelman,C. Buddie Mullins

DOI: https://doi.org/10.1039/c5cp90039e

IF: 3.3

2015-01-01

Physical Chemistry Chemical Physics

Abstract:Correction for ‘Control of selectivity in allylic alcohol oxidation on gold surfaces: the role of oxygen adatoms and hydroxyl species’ by Gregory M. Mullen et al., Phys. Chem. Chem. Phys., 2015, 17, 4730–4738.
Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

A. Schulman,C. Acha

DOI: https://doi.org/10.1016/j.physb.2011.12.049

2012-01-27

Abstract:In order to determine the key parameters that control the resistive switching mechanism in metal-complex oxides interfaces, we have studied the electrical properties of metal / YBa2Cu3O7-d (YBCO) interfaces using metals with different oxidation energy and work function (Au, Pt, Ag) deposited by sputtering on the surface of a YBCO ceramic sample. By analyzing the IV characteristics of the contact interfaces and the temperature dependence of their resistance, we inferred that ion migration may generate or cancel conducting filaments, which modify the resistance near the interface, in accordance with the predictions of a recent model.

Materials Science
Effect of Oxygen Interstitial Ordering on Multiple Order Parameters in Rare Earth Ferrite.

Yang Zhang,Wenbin Wang,Wandong Xing,Shaobo Cheng,Shiqing Deng,Manuel Angst,Chu-Ping Yu,Fanli Lan,Zhiying Cheng,David Mandrus,Brian Sales,Jian Shen,Xiaoyan Zhong,Nyan-Hwa Tai,Rong Yu,Jing Zhu

DOI: https://doi.org/10.1103/physrevlett.123.247601

IF: 8.6

2019-01-01

Physical Review Letters

Abstract:Oxygen interstitials and vacancies play a key role in modulating the microstructure and properties of nonstoichiometric oxide systems, such as those used for superconductors and multiferroics. Key to understanding the tuning mechanisms resulting from oxygen doping is a knowledge of the precise positions of these lattice defects, and of the interaction both between these defects and with many order parameters. Here, we report how such information can, for the first time, be obtained from a sample of LuFe_{2}O_{4.22} using a range of techniques including advanced electron microscopy, atomic-resolution spectroscopy, and density functional theory calculations. The results provide quantitative atomic details of the crystal unit cell, together with a description of the ferroelastic, ferroelectric, and ferromagnetic order parameters. We elucidate also the interaction between these order parameters and the positions of the oxygen interstitials in the oxygen-enriched sample. The comprehensive analysis of oxygen interstitial ordering provides insights into understanding the coupling among different degrees of freedom in rare earth ferrites and demonstrates that oxygen content regulation is a powerful tool for tuning the microstructure and properties for this class of quantum material.
Some Comments on the Note "comment on 'Single-Parameter Quantum Charge and Spin Pumping in Armchair Graphene Nanoribbons' by Zhu and Berakdar (Arxiv:1207.3457)"

Y. Zhou,M. W. Wu

DOI: https://doi.org/10.48550/arxiv.1207.4365

2012-01-01

Abstract:In response to the comment by Zhu and Berakdar (arXiv:1207.3457) that the physical system considered by them in their previous work [Ding et al., PRB 84, 115433 (2011)] is conceptually different from ours in the appendix of our latest paper [Zhou and Wu, arXiv:1206.3435], we show why they are relevant and further point out conceptually the problems in their work. We also point out that the main supporting arguments in their comment are incorrect.
Intrinsic Versus Extrinsic Orbital and Electronic Reconstructions at Complex Oxide Interfaces

R. J. Green,V Zabolotnyy,M. Zwiebler,Z. Liao,S. Macke,R. Sutarto,F. He,M. Huijben,G. Rijnders,G. Koster,J. Geck,V Hinkov,G. A. Sawatzky

DOI: https://doi.org/10.1103/physrevmaterials.5.065004

IF: 3.98

2021-01-01

Physical Review Materials

Abstract:The interface between the insulators LaAlO3 (LAO) and SrTiO3 accommodates a two-dimensional electron liquid (2DEL)-a high-mobility electron system exhibiting superconductivity as well as indications of magnetism and correlations. While this flagship oxide heterostructure shows promise for electronics applications, the origin and microscopic properties of the 2DEL remain unclear. The uncertainty remains in part because the electronic structures of such nanoscale-buried interfaces are difficult to probe and is compounded by the variable presence of oxygen vacancies and coexistence of both localized and delocalized charges. These various complications have precluded decisive tests of intrinsic electronic and orbital reconstruction at this interface. Here we overcome prior difficulties by developing an interface analysis based on the inherently interface-sensitive resonant x-ray reflectometry. We discover a high-charge density of 0.5 electrons per interfacial unit cell (u.c.) for samples above the critical LAO thickness and extract the depth dependence of both the orbital and the electronic reconstructions near the buried interface. We find that the majority of the reconstruction phenomena are confined to within 2 u.c. of the interface, and we quantify how oxygen vacancies significantly affect the electronic system. Our results provide strong support for the existence of polarity-induced electronic reconstruction, clearly separating its effects from those of oxygen vacancies.

Comment on "Selective Interface Control of Order Parameters in Complex Oxides" (<a class="link-https" data-arxiv-id="1505.07451" href="https://arxiv.org/abs/1505.07451">arXiv:1505.07451</a>)

Pure Electronic Metal-Insulator Transition at the Interface of Complex Oxides

Comment on "Extension of Rietveld Refinement for Benchtop Powder XRD Analysis of Ultrasmall Supported Nanoparticles" by J. Lipp et al. (Chem. Mater. 2022, 34, 18, 8091-8111)

Control of lectronic onduction at an xide eterointerface using olar dsorbates

Sign reversal of the order parameter in (Li<sub>1−<i>

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Comment on <a class="link-https" data-arxiv-id="cond-mat/0007299" href="https://arxiv.org/abs/cond-mat/0007299">cond-mat/0007299</a> by Schofield and Sandeman : inconsistency with experiments

Comment on ``Off-stoichiometry mechanism of the isotope effect in manganites''

Reply to "Comment on 'Fano resonance for Anderson Impurity Systems' "

Oxide interfaces: pathways to novel phenomena

Understanding interface effects in perovskite thin films

Comment on 'A new nanoscale metastable iron phase in carbon steels'

Reply to "Comment on 'Nontrivial Quantum Geometry and the Strength of Electron-Phonon Coupling',

Comment on: Hysteresis phenomena in CO catalytic oxidation system in the presence of inhomogeneities of the catalyst surface. Authors' reply

Atomic-Scale Control of Competing Electronic Phases in Ultrathin Lanio3

Interfacial Complexions and the Related Atomic Transport Behaviors in Gold-Oxide Systems

Correction: Control of selectivity in allylic alcohol oxidation on gold surfaces: the role of oxygen adatoms and hydroxyl species

Resistive switching effects on the spatial distribution of phases in metal-complex oxide interfaces

Effect of Oxygen Interstitial Ordering on Multiple Order Parameters in Rare Earth Ferrite.

Some Comments on the Note "comment on 'Single-Parameter Quantum Charge and Spin Pumping in Armchair Graphene Nanoribbons' by Zhu and Berakdar (Arxiv:1207.3457)"

Intrinsic Versus Extrinsic Orbital and Electronic Reconstructions at Complex Oxide Interfaces