Abstract:Transcribing quantum effects from lower to higher dimensions is a complex yet intriguing area of research. Coulomb blockade (CB), a fundamental quantum phenomenon, is commonly observed in low-dimensional materials like quantum dots (QDs) at extremely low temperatures. This behavior shows promise for the development of high-performance memory and thermoelectric devices. However, when transitioning to larger dimensions, such as arrays at room temperature, the CB effect is hindered by thermal fluctuations and structural inconsistencies. This study presents a thorough examination of electron transport through PbS QDs using a blend of experimental and theoretical methods. By creating a sizable parallel array of QDs immobilized on self-assembled monolayers (SAMs) and employing single-layer graphene (SLG) as the top electrode, we were able to maintain the CB effect at room temperature on a device scale. Additionally, a device with a top gate structure was designed to precisely regulate the energetic position of quantum states in relation to the Fermi level of the electrode. By utilizing ultra-small QDs (typically 2 nm in size), we successfully sustained the CB effect at room temperature. To investigate the impact of structural uncertainties, we combined density-functional theory and quantum transport theory to comprehensively analyze the quantum transport properties of QDs bound with SAMs across various facets. This enabled us to establish a correlation between these structural variations and the experimental data distribution.

Tuning of Zero Energy States in Quantum Dots of Silicene and Bilayer Graphene by Electric Field

Tuning Quantum Dot States with Optical Fields

Tuning Of Energy Levels And Optical Properties Of Graphene Quantum Dots

Zero-energy-state-oriented Tunability of Spin Polarization in Zigzag-Edged Bowtie-Shaped Graphene Nanoflakes under an Electric Field

Tuning confined states and valley g-factors by quantum dot design in bilayer graphene

Large Modulation of Zero-Dimensional Electronic States in Quantum Dots by Electric-Double-layer Gating

Tuning Inter-Dot Tunnel Coupling of an Etched Graphene Double Quantum Dot by Adjacent Metal Gates

Tuning the electrical conductance of oligo(phenylene-ethynylene) derivatives-PbS quantum-dot bilayers

Tunable quantum dots in monolayer graphene

Band bending and zero-conductance resonances controlled by edge electric fields in zigzag silicene nanoribbons

Energy gaps, topological insulator state and zero-field quantum Hall effect in graphene by strain engineering

Tunable p-n junction barriers in few-electron bilayer graphene quantum dots

Tunable Fano and Dicke resonant tunneling of double quantum dots sandwiched between topological insulators

Coulomb oscillations in a gate-controlled few-layer graphene quantum dot.

Band Modulation for Silicene and Graphene Quantum Dots: A First-Principles Calculation

Strong Edge Magnetism and Tunable Energy Gaps in Zigzag Graphene Quantum Dots with High Stability

Quantum Dot in Z-shaped Graphene Nanoribbon

Electrical manipulation of an electronic two-state system in Ge/Si quantum dots

Ground States and Excited States in a Tunable Graphene Quantum Dot

Electron Delocalization in Gate-Tunable Gapless Silicene

Zeeman Tunability of Andreev Bound States in van der Waals Tunnel Barriers