Synthesis and insights into the gas sensing mechanisms of N-doped MoS 2 hierarchical structures with superior gas sensing properties at room temperature

Mingli Yin,Kexin Wang,Chunxiao Gao,Rongrong Yang,Yan Huang,Lingmin Yu
DOI: https://doi.org/10.1016/j.materresbull.2024.112943
IF: 5.6
2024-06-11
Materials Research Bulletin
Abstract:An N-doped MoS 2 hierarchical structure with outstanding gas sensing performance has been successfully synthesized by a simple in situ atomic substitution technology for the detection of NO 2 . N doping significantly changes the electronic properties of the MoS 2 samples, reduces the charge transfer resistance and band gap. The responses of the 1.0 at% N-doped MoS 2 (N-MoS 2 -0.1) sensor to 50 and 100 ppm NO 2 at 25 °C are as high as 1603% and 1987%, respectively, which are respective 5.7 and 4.6 times that of the MoS 2 sensor. The sensor also possesses ppt-level theoretical detection limit (270 ppt), high selectivity, long-term stability. The possible gas sensing mechanisms have been discussed in detail. This study provides a feasible solution for the synthesis of N-doped 2D materials and demonstrates the enormous development potential in the field of room temperature gas sensors.
materials science, multidisciplinary
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