The Franz‐Keldysh effect in the optical absorption spectrum of TlGaSe 2 layered semiconductor caused by charged native defects

Serdar Gören,Yasin Şale,MirHasan Yunus Seyidov

DOI: https://doi.org/10.1088/1361-6641/ad255b

IF: 2.048

2024-02-04

Semiconductor Science and Technology

Abstract:The Franz-Keldysh effect in the optical absorption edge of bulk TlGaSe2 layered semiconductor poled under an external electric field was investigated in the present work. The Franz-Keldysh shift below the optical band gap absorption region, as well as the quasi-periodic oscillations above the fundamental band gap of TlGaSe2, were observed. The measured changes in optical light absorption of the TlGaSe2 sample were revealed after poling processing. The poling technique is used to produce the built-in internal electric field within the TlGaSe2 semiconductor. The frozen-in internal electric field in TlGaSe2 was experimentally monitored through changes in the line–shape of the absorption spectra at the fundamental band edge. The observed results are accurately fitted with the theoretical line-shape function of the Franz - Keldysh absorption tail below the bandgap of TlGaSe2 and quasi-periodic oscillations above the bandgap. A good agreement between theoretical and experimental results took place. The present study demonstrated that the Franz - Keldysh effect can be used to identify and characterize the localized internal electric fields originating from the electrically active native imperfections in the TlGaSe2 crystals.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter

What problem does this paper attempt to address?

The paper attempts to address the issue of studying the Franz-Keldysh effect in TlGaSe₂ layered semiconductor materials under the influence of an external electric field. Specifically, the authors experimentally observed the changes in the optical absorption edge of TlGaSe₂ samples at different temperatures (from approximately 80K to 300K) and explored the relationship between these changes and the internal electric field. The study aims to identify and characterize the local internal electric fields caused by electrically active intrinsic defects, which are common in TlGaSe₂ crystals.

### Main Issues:
1. **Franz-Keldysh Effect**: Under the influence of an external electric field, the optical absorption edge of TlGaSe₂ samples changes, a phenomenon known as the Franz-Keldysh effect. The authors aim to experimentally verify this effect and analyze its impact on the optical absorption spectrum.
2. **Identification and Characterization of Internal Electric Fields**: The study introduces internal electric fields in TlGaSe₂ samples through polarization techniques and monitors these fields' presence and characteristics via changes in the optical absorption spectrum.
3. **Impact of Intrinsic Defects**: The study explores the role of electrically active intrinsic defects (such as selenium vacancies) in the formation of internal electric fields in TlGaSe₂ crystals and their impact on the material's electronic properties.

### Research Background:
- **TlGaSe₂ Material**: TlGaSe₂ is a layered semiconductor material with a two-dimensional structure, typically exhibiting p-type conductivity. Due to the lack of effective n-type doping techniques, this material faces challenges in fabricating charge-splitting homojunctions and heterojunctions.
- **Intrinsic Defects**: Common intrinsic defects in TlGaSe₂ include selenium vacancies, which inevitably form during material growth and significantly affect its electronic and optical properties.
- **Franz-Keldysh Effect**: When a semiconductor material is subjected to an external electric field, the band edges tilt, leading to changes in the optical absorption spectrum. This effect can be used to identify and characterize internal electric fields in the material.

### Experimental Methods:
- **Sample Preparation**: TlGaSe₂ single crystals were grown using an improved Bridgman-Stockbarger method, and samples with a thickness of approximately 200µm were prepared.
- **Polarization Treatment**: Electrodes were established on the samples, and a fixed bias (approximately 15V) was applied at room temperature to introduce internal electric fields in the samples.
- **Optical Absorption Measurement**: A monochromator was used to record the optical transmission spectra at different temperatures, and the optical absorption coefficient was calculated using the Beer-Lambert formula.
- **Thermally Stimulated Current Measurement**: Thermally stimulated current (TSC) measurements were conducted to further verify the presence and characteristics of the internal electric fields.

### Conclusion:
- **Experimental Results**: The Franz-Keldysh effect, including shifts and quasi-periodic oscillations in the optical absorption edge, was observed in TlGaSe₂ samples after polarization treatment.
- **Theoretical Fitting**: The experimental results fit well with theoretical models, confirming the presence of internal electric fields.
- **Application Prospects**: This study provides a theoretical foundation and technical support for developing devices such as electro-optic modulators and photonic switches using TlGaSe₂ materials.

Through these studies, the authors not only revealed the Franz-Keldysh effect in TlGaSe₂ materials but also provided important experimental evidence for further understanding and controlling the electrical and optical properties of this material.