Valley- and spin-filter in monolayer MoS$_2$

Leyla Majidi,Moslem Zare,Reza Asgari

DOI: https://doi.org/10.1016/j.ssc.2014.09.008

2014-10-11

Abstract:We propose a valley- and spin-filter based on a normal/ferromagnetic/normal molybdenum disulfide (MoS$_2$) junction where the polarizations of the valley and the spin can be inverted by reversing the direction of the exchange field in the ferromagnetic region. By using a modified Dirac Hamiltonian and the scattering formalism, we find that the polarizations can be tuned by applying a gate voltage and changing the exchange field in the structure. We further demonstrate that the presence of a topological term ($\beta$) in the Hamiltonian results in an enhancement or a reduction of the charge conductance depending on the value of the exchange field.

Mesoscale and Nanoscale Physics

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to achieve effective regulation of the electron valley degree of freedom and spin degree of freedom by designing a normal/ferromagnetic/normal (N/F/N) junction based on molybdenum disulfide (MoS₂), so as to generate highly polarized valley currents and spin currents. Specifically, the author hopes to adjust the valley polarization and spin polarization by changing the gate voltage and the direction of the exchange field in the ferromagnetic region, and study the physical mechanisms behind these polarization phenomena.

### Main problems:
1. **Realization of valley and spin polarization**: How to use the N/F/N structure in monolayer MoS₂ to achieve efficient valley and spin filtering.
2. **Tunability of polarization**: How to control the degree of valley and spin polarization by adjusting the chemical potential (i.e., the gate voltage) and the exchange field.
3. **Polarization reversal**: How to reverse the valley and spin polarization by changing the direction of the exchange field.
4. **Influence of topological terms**: Study the influence of the topological term (β) in the Hamiltonian on the charge conductance, and explore the mechanism of enhancing or weakening the charge conductance.

### Research background:
- Monolayer MoS₂ is a direct - gap semiconductor with two independent valleys (K and K'), and due to strong spin - orbit coupling (SOC), its energy band structure exhibits significant spin - valley coupling characteristics.
- By introducing a ferromagnetic region, an exchange field can be induced in MoS₂, thereby affecting the electron transport behavior.
- Research shows that this N/F/N structure can be used to generate highly polarized valley currents and spin currents, which is of great significance for the development of new valleytronics and spintronics devices.

### Key findings:
- In a specific range of chemical potential, the N/F/N structure can achieve complete valley and spin polarization.
- By changing the direction of the exchange field, the valley and spin polarization can be reversed.
- The existence of the topological term (β) can enhance or weaken the charge conductance, depending on the strength of the exchange field.

### Conclusion:
This research provides a new method for achieving efficient valley and spin filtering, and shows the potential application prospects of monolayer MoS₂ in the fields of valleytronics and spintronics.