Abstract:The injection of a spin-polarized current into a semiconductor, one of the key requirements for spintronics, poses the challenge for computational materials science to possibly screen suitable materials. In a number of theoretical investigations, we have put forward magnetic intermetallic compounds grown epitaxially on Si as promising candidates. We employed density functional theory calculations with the GGA-PBE exchange-correlation functional and the full-potential augmented plane wave plus local orbital (FP-APW+lo) method, as implemented in the WIEN2k package. In the spirit of computational materials science, we investigated the stability and magnetic properties of thin films of the Heusler alloy Co2MnSi, as well as of binary late transition metal monosilicides, in contact with the Si surface. For the Heusler alloy Co2MnSi, we could show that the (001) surface retains the half-metallic character of the bulk if a fully Mn-terminated surface is prepared. At interfaces with Si, a finite density of states at the Fermi energy was found for both spin channels, but the half-metallic behavior recovers only a few layers away from the interface. For the monosilicides of the late 3d-transition metals (Mn, Fe, Co, Ni), we predict a CsCl-like structure that has not yet been observed as bulk compound but may be stabilized epitaxially on Si(001). For very thin films of CoSi and MnSi grown in this structure, our calculations find a ferromagnetic ground state. Recently, we identified the atomic structure of MnSi films on Si(111) which is close to the natural crystal structure of bulk MnSi (B20), and also shows large magnetic moments of the Mn atoms at the surface and interface. All MnSi films have a high degree of spin polarization (between 30% and 50%, depending on film thickness) at the Fermi level, and are thus promising materials for fabricating electrical contacts for spin injection into Si.

Odd‐Stoichiometry and Secondary Phase Relations in Higher Manganese Silicides

Higher manganese silicide nanowires of Nowotny chimney ladder phase

Grain Size Effect on the Phase Transformations of Higher Manganese Silicide Thermoelectric Materials: an in Situ Energy Dispersive X-Ray Diffraction Study

Eco‐Friendly Higher Manganese Silicide Thermoelectric Materials: Progress and Future Challenges

Microstructure and Thermoelectric Properties of SiGe-added Higher Manganese Silicides

Synthesis of Zintl Phase Metal Silicide Thermoelectric Materials in Magnesium/Zinc Flux

Magnetic properties and identification of Griffiths-like phase in Mn2FeSi Heusler antiferromagnet

PREPARATION OF N-TYPE HIGHER MANGANESE SILICIDE FILMS BY MAGNETRON SPUTTERING

Extraordinary Thermoelectric Performance in N-Type Manganese Doped Mg3Sb2 Zintl: High Band Degeneracy, Tuned Carrier Scattering Mechanism and Hierarchical Microstructure

A New Type of Compositionally Complex M5Si3 Silicides: Cation Ordering and Unexpected Phase Stability

Improved Thermoelectric Performance of Higher Manganese Silicides with Ge Additions

Transition-Metal Silicides As Materials for Magnet-Semiconductor Heterostructures

Phase Selection in Mn–Si Alloys by Fast Solid‐State Reaction with Enhanced Skyrmion Stability

Composites of Higher Manganese Silicides and Nanostructured Secondary Phases and Their Thermoelectric Properties

New Phases in the Sc−Mn−Si and Sc−Mn−Al−Si Systems Through Molten Indium Flux Synthesis

Twisting Phonons in Complex Crystals with Quasi-One-dimensional Substructures

Thermoelectric Properties of Undoped High Purity Higher Manganese Silicides Grown by Chemical Vapor Transport

Effect of Si Doping on Microstructure and Martensite Transformation in Ni-Mn-Sb Ferromagnetic Shape Memory Alloys

Thermoelectric Properties of Higher Manganese Silicide Films with Addition of Chromium

Anomalous Nernst effect in the noncollinear antiferromagnet Mn$_5$Si$_3$

First-principles Study of Thin Magnetic Transition-Metal Silicide Films on Si(001)