Near field thermal memory device

S. A. Dyakov,J. Dai,M. Yan,M. Qiu

DOI: https://doi.org/10.48550/arXiv.1408.5831

2014-11-03

Abstract:We report the concept of a near-field memory device based on the radiative bistability effect in the system of two closely separated parallel plates of SiO$_2$ and VO$_2$ which exchange heat by thermal radiation in vacuum. We demonstrate that the VO$_2$ plate, having metal-insulator transition at 340 K, has two thermodynamical steady-states. One can switch between the states using an external laser impulse. We show that due to near-field photon tunneling between the plates, the switching time is found to be only 5 ms which is several orders lower than in case of far field.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to develop a new type of storage device based on the near - field thermal radiation effect, specifically a "near - field thermal memory device". This device utilizes the metal - insulator phase - change characteristic of vanadium dioxide (VO₂) that occurs near 340K, and realizes rapid thermal switching through the near - field photon tunneling effect between two SiO₂ and VO₂ plates placed in parallel with a very small spacing.

### Specific Problems and Solutions

1. **Slow thermal switching speed**: The switching time of traditional far - field thermal memory devices is long, which limits their practical applications. This paper proposes to use the near - field photon tunneling effect to significantly shorten the switching time. Experimental results show that the switching time under near - field conditions is only 5 milliseconds, several orders of magnitude faster than that under far - field conditions.

2. **Thermal stability and bistability**: The VO₂ material has two stable phases (insulating state and metallic state) at different temperatures, which enables the system to switch between two different temperature points, thereby realizing the storage of binary data. The author proves the existence of this bistability through theoretical analysis and numerical simulation, and shows how to control the switching between these two states through external laser pulses.

3. **Thermal conduction efficiency**: Traditional thermal conduction methods are limited by problems such as the speed of heat carriers and interface thermal resistance. The near - field photon tunneling mechanism proposed in this paper avoids these problems, improves the thermal conduction efficiency, and makes heat control in information processing more effective.

### Summary

The main contribution of this paper is to propose a new concept of storage device based on near - field thermal radiation, which solves the problems of slow switching speed and poor thermal stability in traditional thermal memory devices. By using the metal - insulator phase - change characteristic of VO₂ and the near - field photon tunneling effect, rapid and stable thermal switching is achieved, providing new ideas and methods for future information processing technologies.