Observation of Optically Addressable Nonvolatile Memory in VO 2 at Room Temperature
Youngho Jung,Junho Jeong,Zhongnan Qu,Bin Cui,Ankita Khanda,Stuart S. P. Parkin,Joyce K. S. Poon
DOI: https://doi.org/10.1002/aelm.202001142
IF: 6.2
2021-06-04
Advanced Electronic Materials
Abstract:<p>Vanadium dioxide (VO<sub>2</sub>) is a phase change material that can reversibly change between high and low resistivity states through electronic and structural phase transitions. Thus far, VO<sub>2</sub> memory devices have essentially been volatile at room temperature, and nonvolatile memory has required non-ambient surroundings (e.g., elevated temperatures, electrolytes) and long write times. For the first time, here, the authors report the observation of optically addressable nonvolatile memory in VO<sub>2</sub> at room temperature with a readout by voltage oscillations. The read and write times have to be kept shorter than about 150 µs. The writing of the memory and onset of the voltage oscillations have a minimum optical power threshold. Although the physical mechanisms underlying this memory effect require further investigations, this discovery illustrates the potential of VO<sub>2</sub> for new computing devices and architectures, such as artificial neurons and oscillatory neural networks.</p>
materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology