Annealing-induced enhancement of ferromagnetism and nano-particle formation in ferromagnetic-semiconductor GeFe

Yuki Wakabayashi,Yoshisuke Ban,Shinobu Ohya,Masaaki Tanaka
DOI: https://doi.org/10.1103/PhysRevB.90.205209
2014-02-28
Abstract:We report the annealing-induced enhancement of ferromagnetism and nano-particle formation in group-IV-based ferromagnetic-semiconductor GeFe. We successfully increase the Curie temperature of the Ge0.895Fe0.105 film up to ~220 K while keeping a single ferromagnetic phase when the annealing temperature is lower than 500°C. In contrast, when annealed at 600°C, single-crystal GeFe nano-particles with stacking faults and twins, which have a high Curie temperature nearly up to room temperature, are formed in the film. Our results show that annealing is quite effective to improve the magnetic properties of GeFe for high-temperature-operating spin-injection devices based on Si or Ge.
Materials Science
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