Abstract:The sparse arrangement of atoms on the high‐index copper surface leads to weak interfacial coupling with growing graphene. The strength of interfacial coupling essentially determines the amount and dispersion of graphene orientation, and thus it is expected that precise control of mono‐ and multilayer graphene growth can be achieved by modulating the interfacial coupling. Controlled and precise synthesis of materials has been a central pursuit in academia and industry. With the rise of twistronics research, there is growing demand for synthesizing orientation‐controlled 2D materials with atomic precision. Previous theories for 2D materials can predict graphene (Gr) growth on low‐index metal substrates but fail to explain the discrete orientations on most high‐index substrates, inconsistent with experimental data. Using density functional theory (DFT) and ab‐initio molecular dynamics (AIMD), this study explores graphene growth on high‐index substrates, showing that atomic steps do not dominate in trapping C atoms or driving preferential graphene nucleation at high temperatures. Thus, the possibility of intrinsic atomic steps in inducing graphene orientation on high‐index substrates is ruled out. Interfacial coupling strength between graphene and substrates is quantified using a close contact index (CCI), linking atomic structure and electronic states. The coupling between graphene and high‐index Cu surfaces is generally weak, reducing substrate anchoring and increasing graphene orientation dispersion. The extension of this theory to bilayer graphene (BLG) reveals competition between Gr/Cu interfacial coupling and Gr/Gr interlayer coupling, offering insights for controlling twist angles. This theory explains the discrete orientations on high‐index substrates, providing a theoretical basis for synthesizing orientation‐controlled graphene.

Quasi-1D graphene superlattices formed on high index surfaces

Quasi-one-dimensional Graphene Superlattices Formed on High-Index Surfaces

Substrate-Induced Graphene Chemistry for 2d Superlattices with Tunable Periodicities

Surface Structures Of Single-Crystal Graphene On Cu/Ni(111) And Ge(110) Substrates Studied By Scanning Tunneling Microscopy

Modulating the Electronic Properties of Monolayer Graphene Using a Periodic Quasi-One-Dimensional Potential Generated by Hex-Reconstructed Au(001)

Ab initio study of energy-band modulation in graphene-based two-dimensional layered superlattices

Modulating the Electronic Properties of Graphene by Self-Organized Sulfur Identical Nanoclusters and Atomic Superlattices Confined at an Interface

Interfacial Coupling Induced Discrete Orientation of Epitaxial Graphene on High‐Index Cu Substrates

Scanning Tunneling Microscopy Study of Superlattice Domain Boundaries on Graphite Surface

Electronic structure of graphene on single crystal copper substrates

Superlattices: Substrate‐Induced Graphene Chemistry for 2D Superlattices with Tunable Periodicities (adv. Mater. 11/2016)

Quasi-freestanding Monolayer Heterostructure of Graphene and Hexagonal Boron Nitride on Ir(111) with a Zigzag Boundary.

Quasicrystalline 30° Twisted Bilayer Graphene As an Incommensurate Superlattice with Strong Interlayer Coupling.

Formation of Graphene P-N Superlattices on Pb Quantum Wedged Islands

Modification of electronic surface states by graphene islands on Cu(111)

The tunnelling spectra of quasi-free-standing graphene monolayer

Surface and interface structure of quasi-free standing graphene on SiC

Two-Dimensional Superlattice: Modulation of Band Gaps in Graphene-Based Monolayer Carbon Superlattices

Visualization of A Maze-Like Reconstruction of Graphene on A Copper Surface at the Atomic Scale

Time-lapsed graphene moiré superlattice on Cu(111)

Quasi-Free-Standing Graphene Nano-Islands on Ag(110), Grown from Solid Carbon Source