New topological excitations and melting transitions in quantum Hall systems

Tzu-ging Lin,George Simion,John D. Watson,Michael J. Manfra,Gabor A. Csathy,Yuli Lyanda-Geller,Leonid P. Rokhinson
DOI: https://doi.org/10.48550/arXiv.1311.2954
2013-11-13
Abstract:We discover a new topological excitation of two dimensional electrons in the quantum Hall regime. The strain dependence of resistivity is shown to change sign upon crossing filling-factor-specified boundaries of reentrant integer quantum Hall effect (RIQHE) states. This observation violates the known symmetry of electron bubbles thought to be responsible for the RIQHE. We demonstrate theoretically that electron bubbles become elongated in the vicinity of charge defects and form textures of finite size. Calculations confirm that texturing lowers the energy of excitations. These textures form hedgehogs (vortices) around defects having (lacking) one extra electron, resulting in striking strain-dependent resistivity that changes sign on opposite boundaries of the RIQHE. At low density these textures form an insulating Abrikosov lattice. At densities sufficient to cause the textures to overlap, their interactions are described by the XY-model and the lattice melts. This melting explains the sharp metal-insulator transition observed in finite temperature conductivity measurements.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: **In the quantum Hall effect (QHE) system, especially in the re - entered integer quantum Hall effect (RIQHE) state, discover and explain a new topological excitation phenomenon and its resistivity change related to strain**. Specifically, the authors experimentally observed that within certain filling factor ranges, the response of resistivity to uniaxial strain changes sign. This phenomenon violates the symmetry of the known electron bubble model, indicating that there may be a new topological excitation mechanism. To understand this phenomenon, the authors proposed a theoretical model to explain how these new topological excitations form and explored their influence on resistivity. ### Main problems and findings: 1. **Discovery of new topological excitations**: - In the quantum Hall effect system, especially in the re - entered integer quantum Hall effect (RIQHE) state, new topological excitations were discovered. - These excitations manifest as finite - size textures formed around charge defects, such as hedgehogs and vortices. 2. **Strain - dependent resistivity change**: - It was found in the experiment that the response of resistivity to uniaxial strain shows different signs on both sides of the RIQHE state. - This phenomenon cannot be explained by the traditional electron bubble model, suggesting the existence of a new physical mechanism. 3. **Theoretical explanation**: - The authors proposed that electron bubbles will elongate when approaching charge defects, forming textures with different symmetries. - These textures cause the response of resistivity to strain to change, explaining the experimentally observed phenomenon. 4. **Phase - change mechanism**: - At low density, these textures form an insulating Abrikosov lattice. - When the density is high enough, the texture interactions can be described by the XY model, leading to lattice melting, which explains the sharp boundary of the metal - insulator transition. ### Formula summary: - **Filling factor**: \(\nu=\frac{\Phi_0}{\Phi}=\frac{h}{eB / n}\), where \(\Phi_0 = \frac{h}{e}\) is the magnetic flux quantum, \(\Phi=\frac{B}{n}\) is the magnetic flux per electron, \(B\) is the magnetic field strength, and \(n\) is the electron density. - **Hall resistance**: In the integer quantum Hall effect, the Hall resistance is quantized as multiples of \(R_q=\frac{h}{e^2}\). - **Energy formula**: The effective interaction energy \(U(R_{ij})=\int\frac{d^2q}{(2\pi)^2}\rho_i^*(q)[V_H(q)-V_F(q)]\rho_j(q)e^{iq\cdot R_{ij}}\). - **Strain term in the Hamiltonian**: The linear strain contribution \(H_\epsilon = -\epsilon\tilde{U}_f(a)\cos[2(\phi_i-\theta_{ik})]\). - **Conductivity formula**: \(\sigma_s^{(h,v)}\propto\prod_ip(\Delta\theta_i)\), where \(p(\Delta\theta_i)=\langle\Psi_{ik}^*|\Psi_{ik'}\rangle = 1-\alpha(a_i)(\Delta\theta_i)^2\). Through these studies, the authors not only revealed new topological excitation phenomena but also provided a new perspective for understanding the complex phase transitions in the quantum Hall effect system.