Abstract:Tin sulphide (SnS) is a promising new material for use in photovoltaic solar cells. With a direct energy band gap of about 1.3 eV, and a high optical absorption coefficient, only a few microns of SnS are needed to absorb most of the incident light. Not only is SnS made of abundant, environmentally acceptable elements, it is also amphoteric giving flexibility to device design. Structures that can be envisioned include p-type SnS (absorber layer) / n-type (window layer) heterojunction devices, buried p-n junction devices made using SnS and p-i-n structure devices where the i-layer is SnS. It is most likely that the grain boundaries in SnS can be passivated either by counter-doping the grain boundaries, or by oxidizing the grain boundaries to form wide energy bandgap n-type SnO2 within p-type SnS, as dopants or oxygen will diffuse preferentially down the grain boundaries and react first at the grain boundary surfaces. Thin film solar cell devices based on the use of SnS have now been produced with efficiencies > 2%; these and other promising results indicate that it is most likely that devices with efficiencies > 10% will be produced in the near future. Given that tin layers are routinely coated in industry over large area substrates and that industrial sulphidization processes are also well established, the industrialization of this technology should be more straight forward than that encountered with the already commercialised cadmium telluride and copper indium gallium diselenide thin film technologies.This review discusses the chemical and physical properties of SnS, the methods of producing both bulk crystals and thin films of SnS, the literature available on studies of SnS-based photovoltaic solar cell devices, and progress made so far in developing this exciting new material.

Parameters Influencing the Optical Properties Of SnS Thin Films

Optical linear-nonlinear and dispersion parameters of thermally evaporated SnS thin films as absorber material for solar cells

On the Structural and Optical Properties of Sns Films Grown by Thermal Evaporation Method

A study of SnS thin films and its suitability for photovoltaic application based on the existence of persistent photocurrent

Influence of grain size on the band-gap of annealed SnS thin films

Thin films of tin sulphide for use in thin film solar cell devices

Optical, electrical and electronic properties of SnS thin films deposited by sol gel spin coating technique for photovoltaic applications

Thin Films Of Tin Sulphide For Application In Photovoltaic Solar Cells

Change in refractive index of p-SnS thin film due to molecular polarizability

Single Phase, Large Grain, p-Conductivity-type SnS Layers Produced using the Thermal Evaporation Method

Optical behaviour of sprayed tin sulphide thin films

Structural, Optical, and Electro-Optical Properties of Thermally Evaporated Tin Sulphide Layers

Microstructure Dependent Physical Properties of Evaporated Tin Sulfide Films

Optical and dispersion parameters of co-evaporated SnS<sub>0.7</sub>Se<sub>0.3</sub> thin films

Effects of Sulphur and Air Annealing on the Properties of Thermally Evaporated SnS Layers for Application in Thin Film Solar Cell Devices

Thickness Dependent Optical Properties of Thermally Evaporated SnS Thin Films

The role of vast off-stoichiometry of SnSe thin film on structural, morphological, optical, and electrical properties for photovoltaic applications

Synthesis and characterisation of co-evaporated tin sulphide thin films

Photovoltaic performance of n-type SnS active layer in ITO/PEDOT:PSS/SnS/Al structure

Investigation on Optical Properties of SnSe2 Thin Films Synthesized by Two – Stage Process

Non-stoichiometry in SnS: How it affects thin-film morphology and electrical properties