In-situ electron-beam lithography of deterministic single-quantum-dot mesa-structures using low-temperature cathodoluminescence spectroscopy

M. Gschrey,F. Gericke,A. Schüßler,R. Schmidt,J.-H. Schulze,T. Heindel,S. Rodt,A. Strittmatter,S. Reitzenstein
DOI: https://doi.org/10.1063/1.4812343
2013-06-27
Abstract:We report on the deterministic fabrication of sub-um mesa structures containing single quantum dots by in-situ electron-beam lithography. The fabrication method is based on a two-step lithography process using a low-temperature cathodoluminescence (CL) spectroscopy setup. In the first step the position and spectral features of single InGaAs quantum dots (QDs) are detected by CL. Then circular sub-um mesa-structures are exactly defined by high-resolution electron-beam lithography and subsequent etching in the second step. CL spectroscopy and micro-photoluminscence spectroscopy demonstrate the high optical quality of the single-QD mesa-structures with emission linewidths below 15 ueV and g(2)(0) = 0.04. Our lithography method allows for an alignment precision better than 100 nm which paves the way for a fully-deterministic device technology using in-situ CL lithography.
Mesoscale and Nanoscale Physics
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