Abstract:The use of resistive technologies to MPGD detectors is taking advantage for many new applications, including high rate and energetic particle flux scenarios. The recent use of these technologies in large area detectors makes necessary to understand and characterize the response of this type of detectors in order to optimize or constrain the parameters used in its production, material resistivity, strip width, or layer thickness. The values to be chosen will depend on the environmental conditions in which the detector will be placed, and the requirements in time resolution and gain, improving the detector performance for each given application. We present two different methods to calculate the propagation of charge diffusion through different resistive topologies; one is based on a FEM of solving the telegraph equation in our particular strip detector scheme, the other is based on a semi-analytical approach of charge diffusion and is used to determine the charge evolution in a resistive layer.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is: how to improve the performance of Micromegas detectors by using resistive materials, in order to enhance their stability and lifespan in high - particle - flux environments, while reducing the damage of sparks to the read - out electronics. Specifically, the paper focuses on the following aspects: 1. **Spark problem**: - In gas - filled proportional chambers, large deposited energies produced by highly ionizing particles are likely to trigger sparks. These sparks can quickly develop into discharge phenomena, resulting in the loss of a large amount of stored charge in the amplification field and limiting the high - flux operation of the detector. - Sparks can also shorten the service life of the detector and may damage the read - out electronics. 2. **Application of resistive materials**: - To solve the above problems, researchers propose to use resistive materials on the anode plane. When a streamer develops, the increased charge is deposited on the high - resistance material, reducing the anode potential, thereby quenching the streamer and avoiding complete discharge. - This method requires a high resistance value to ensure that the time for complete charge evacuation is long enough, while limiting charge transfer, protecting the electronics and reducing the dead time of the detector. 3. **Optimization of different topologies**: - The paper introduces two different resistive - material topologies: resistive stripes and resistive layers. - **Resistive - stripe topology**: Protection is achieved by covering a thin insulating layer above the read - out electrode and drawing resistive stripes on it. - **Resistive - layer topology**: A thin resistive layer is deposited on an insulating substrate as the base of the MicroMegas structure. 4. **Simulation and characterization**: - To make full use of this new technology, it needs to be characterized and simulated, and appropriate resistance and capacitance values need to be selected to meet the requirements of specific applications. - The paper proposes two methods for calculating the charge diffusion on resistive materials: one is based on the finite - element method to solve the telegraph equation, and the other is based on a semi - analytical method to study the charge evolution in the resistive layer. Through these studies, the paper aims to optimize the parameters of resistive materials, such as material resistivity, stripe width or layer thickness, to improve the performance of the detector under different environmental conditions, especially in high - flux and high - energy - particle environments. ### Formula summary - **Charge diffusion formula**: \[ \rho(r,t)=\frac{Q}{2\pi(2ht + w^{2})}\exp\left(-\frac{r^{2}}{2(2ht + w^{2})}\right) \] where \(h = \frac{1}{RC}\), \(Q\) is the total charge amount, and \(w\) is the width of the Gaussian distribution. - **Relationship between accumulated charge and gain**: \[ Q(R_{o},t_{o})=\int_{0}^{t_{o}}\left[1-\exp\left(-\frac{R_{o}^{2}}{2(2h(t_{o}-t)+w^{2})}\right)\right]\frac{dq(V_{a})}{dt}dt \] where \(R_{o}\) is the regional radius and \(V_{a}\) is the anode potential in each time interval. Through these studies, the paper provides a detailed analysis of the application of resistive materials in MicroMegas detectors and their influence on gain.

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