Abstract:Memristive systems are an important class of nanoionic devices whose intriguing properties stem from formation/dissolution of localized conduction channels and have attracted extensive research interests as a disruptive technology for nonvolatile memory, in-memory logic, and brain-inspired computing. Here I will cover three topics regarding memristor research: 1) Mechanism: understandings of the switching mechanism and device dynamics are fundamentally important for guiding future device developments. We have performed systematic TEM studies on metal filaments based ReRAM devices, including both ex situ and in situ observations, on both vertical and planar device structures, in different material systems, and at different dimensions. The results reveal rich information about the structure, composition and chemical state of the filaments, the filament geometry and growth directions, as well as fundamental electrochemical dynamics that govern the ionic transport and filament growth processes [1-3]. We have used electrostatic force microscopy to directly probe oxygen ion migration and accumulation in HfO2 by in situ measurements of electrostatic force gradient between the probe and the sample, as systematically verified by the charge duration, oxygen gas eruption and controlled studies utilizing different electrolytes, field directions and environments. At higher voltages, oxygen–deficient nano-filaments are formed, as directly identified employing a CS-corrected transmission electron microscope [4]. 2) Device optimization: we engineered the analog switching linearity in TaOx based memristors by homogenizing the filament growth/dissolution rate via introduction of an ion diffusion limiting layer (DLL) at the TiN/TaOx interface. Important synaptic learning rules in biological brains such as spike timing dependent plasticity was implemented using these optimized devices [5]. In addition, we experimentally demonstrated physically evolving networks in nanoscale, solid-state, multi-terminal memristive devices and heterosynaptic plasticity, an important learning rule found in biological systems, was demonstrated in a system where activity of the modulatory terminal strongly affects the synaptic facilitation/depression between the preand post-synaptic terminals [6]. 3) Integration: Large-scale integration of memristive synapses faces great challenges such as the sneak path problem, which can be mitigated by introducing nonlinearity into the device on-state. We have obtained memristors with on-state nonlinearity by adopting a novel oxide heterostructure where each oxide layer can be tailed for a specific function during resistance switching [7], and by employing functionalized graphene as the electrode that has threshold switching characteristics [8].

Benchtop Fabrication of Memristive Atomic Switch Networks

Nanofluidic logic with mechano-ionic memristive switches

Self‐Assembled NiO Nanocrystal Arrays As Memristive Elements

In-situ Study of Understanding the Resistive Switching Mechanisms of Nitride-based Memristor Devices

Transition from synaptic simulation to nonvolatile resistive switching behavior based on an Ag/Ag:ZnO/Pt memristor.

Atomic Layer Deposited Hf0.5Zr0.5O2-based Flexible Memristor with Short/Long-Term Synaptic Plasticity

Tuning Analog Resistive Switching and Plasticity in Bilayer Transition Metal Oxide Based Memristive Synapses

Artificial Synapses Based on Atomic/Molecular Layer Deposited Bilayer-Structured Memristive Thin Films

Decoding the Metallic Bridging Dynamics in Nanogap Atomic Switches

An Interface‐Type Memristive Device for Artificial Synapse and Neuromorphic Computing

Ultrathin Anion Conductors Based Memristor

Resistive Switching Memristor: On the Direct Observation of Physical Nature of Parameter Variability

Neuromorphic Devices and Networks Based on Memristors with Ionic Dynamics

Artificial Synapse Based on a 2D-SnO 2 Memtransistor with Dynamically Tunable Analog Switching for Neuromorphic Computing

TCAD Modeling of Resistive-Switching of HfO2 Memristors: Efficient Device-Circuit Co-Design for Neuromorphic Systems

Conductive Islands Assisted Resistive Switching in Biomimetic Artificial Synapse for Associative Learning and Image Recognition

Asymmetry-induced resistive switching in Ag-Ag$_{2}$S-Ag memristors enabling a simplified atomic-scale memory design

Memristors for Memory and Computing Applications

Atomistic description of conductive bridge formation in two-dimensional material based memristor

Impact of inert electrode on the volatility and non-volatility switching behavior of SiO2-based conductive bridge random access memory devices

New Materials for Memristive Switching