Mesoscopic Transport of Entangled and Nonentangled Kondo Singlets under Bias

Jongbae Hong

DOI: https://doi.org/10.48550/arXiv.1301.5709

2013-03-07

Abstract:The tunneling conductances of a quantum point contact and a magnetized atom adsorbed on an insulating layer above a metallic substrate are obtained by considering the coherent transport of the entangled and nonentangled Kondo singlets, and these are compared with the experimental results. Spins of the entangled Kondo singlet flow unidirectionally in a sequential up-and-down manner. This transport does not follow linear response theory. The nonentangled Kondo singlet performs resonant tunneling through a coherent transport channel and yields coherent side peaks at a finite bias. The coherent transport channel is formed by two electron reservoirs within a coherent region.

Mesoscale and Nanoscale Physics,Strongly Correlated Electrons

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explain the nonlinear tunneling conductance phenomenon in mesoscopic Kondo systems. Specifically, the tunneling conductance of mesoscopic Kondo systems under bias voltage exhibits complex nonlinear shapes, which cannot be fully explained by existing theoretical models (such as non - cross - approximation, Keldysh formalism, quantum Monte Carlo calculations, and extended numerical renormalization group methods).

### Core problems of the paper
1. **Microscopic mechanism of nonlinear tunneling conductance**: The tunneling conductance of mesoscopic Kondo systems under bias voltage exhibits various nonlinear shapes, which need to be explained from a microscopic perspective.
2. **Combination of strong correlation and steady - state non - equilibrium**: The strong correlation effect and steady - state non - equilibrium conditions in mesoscopic Kondo systems make the traditional linear response theory invalid. Therefore, a new theoretical framework is required to describe this complex dynamics.

### Solutions in the paper
The author proposes a new theoretical model to explain these nonlinear tunneling conductance phenomena by considering the coherent transport of entangled and non - entangled Kondo singlets. Specifically:

- **Transport of entangled Kondo singlets**: At zero or low bias voltage, the spins of entangled Kondo singlets flow in a unidirectional manner, forming a zero - bias peak. This transport process does not follow the linear response theory.
- **Resonant tunneling of non - entangled Kondo singlets**: When the bias voltage is large enough, non - entangled Kondo singlets undergo resonant tunneling through coherent tunneling energy levels, forming side peaks. This transport mechanism prohibits reverse movement, thereby simplifying the dynamics.

### Experimental verification
The author compared the theoretical results with experimental data, especially the scanning tunneling spectroscopy data of quantum point contacts and magnetized atoms adsorbed on the insulating layer. The results show that the line shape predicted by the theory is highly consistent with the experimental data, verifying the effectiveness of the proposed theoretical model.

### Formula summary
The main formulas involved in the paper include:
- Tunneling current formula:
\[
I=\frac{e}{\hbar}\int d\omega\tilde{\Gamma}(\omega)[f_{L}(\omega)-f_{R}(\omega)]\rho_{ss}^{m}(\omega)
\]
where:
- \(f_{L(R)}(\omega)\) is the Fermi - Dirac distribution function of the left (right) reservoir,
- \(\tilde{\Gamma}(\omega)=\frac{\Gamma_{L}(\omega)\Gamma_{R}(\omega)}{\Gamma_{L}(\omega)+\Gamma_{R}(\omega)}\),
- \(\rho_{ss}^{m}(\omega)\) is the local density of states (LDOS) of the mediating atom.

- Tunneling conductance formula at zero temperature:
\[
\frac{dI}{dV}=\frac{e}{\hbar}\tilde{\Gamma}(\omega)\rho_{ss}^{m}(\omega)\big|_{\hbar\omega = eV}
\]

Through these formulas and theoretical analysis, the author successfully explained the nonlinear tunneling conductance phenomenon in mesoscopic Kondo systems and provided a new perspective for future experimental and theoretical research.