Pseudo‐Ferroelectric Domain‐Wall in Perovskite Ferroelectric Thin Films
Jian Song,Mingyu Gong,Meng‐fu Tsai,Youcao Ma,Houyu Ma,Yue Liu,Ying‐hao Chu,Rong Huang,Jun Ouyang,Jian Wang,Tongxiang Fan
DOI: https://doi.org/10.1002/adfm.202300330
IF: 19
2023-07-21
Advanced Functional Materials
Abstract:Ferroelastic domain exhibits great importance in thin film design and optimization. While current studies focus on their 2D domain wall characteristics, this study improves the understanding of ferroelastic domain from 2D to 3D. Specifically, it identifies the presence of ferroelectric and dislocation characteristics on the lateral side of the domain wall, which dominate their 3D domain propagation. Perovskite ferroelectric thin films exhibit unique dielectric and piezoelectric properties owing to their internal polarized domains that accommodate the out‐of‐plane (ferroelectric) and in‐plane (ferroelastic) polarization‐induced electrostatic and elastic energy. These domains are generally treated as 2D defects with distinctive differences in domain morphology and domain‐wall characteristics, although they are indeed 3D volumetric defects. Here, by using atomistic simulation and microscopy characterization, a "pseudo‐ferroelectric domain" that has the morphology similar to a ferroelectric domain but holds the same defect character of ferroelastic domain‐wall, i.e., semi‐coherent (100)matrix||(100)domain interface is identified. Such pseudo‐ferroelectric domain walls will play a critical role in the migration kinetics of ferroelastic domains and in the piezoelectric responses of ferroelectric thin films during cyclic mechanical/electrical loading. The study throws light on a novel aspect of domains, namely, the 3D configuration and mobility of domain walls, and their role in the overall domain engineering.
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology