Abstract:We study the effects of spin-orbit interaction (SOI) on the current-induced motion of a magnetic (Bloch) domain wall in ultrathin ferromagnetic nanowires. The conspiracy of spin relaxation and SOI is shown to generate a novel strong nonequilibrium Rashba field, which is dominant even for moderate SOI. This field causes intricate spin precession and a transition from translatory to oscillatory wall dynamics with increasing SOI. We show that current pulses of different lengths can efficiently be used to control the domain wall motion.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is: to study the influence of spin - orbit interaction (SOI) on the current - induced magnetic domain wall (Bloch domain wall) motion in ultrathin ferromagnetic nanowires. Specifically, the author focuses on how the non - equilibrium Rashba field generated by the combined action of spin relaxation and SOI affects the dynamic behavior of the domain wall.
### Research Background
In modern information storage devices, the effective and reliable manipulation of magnetic microstructures is fundamental. The traditional method is to control the magnetization direction in a given area by applying an external local magnetic field, but this method is limited by the domain wall size. In recent years, it has become possible to move domain walls by using current - induced spin torque, which can achieve ultra - high - density data storage. However, in practical applications, there are problems such as poor reproducibility, strong pinning effect and low critical current.
### Core Problems
1. **Influence of Spin - Orbit Interaction (SOI)**
- The author studied how SOI affects the current - induced domain wall motion in ultrathin ferromagnetic nanowires.
- The combined action of spin relaxation and SOI generates a strong non - equilibrium Rashba field, which can significantly affect domain wall dynamics even under weak SOI conditions.
2. **Role of Non - equilibrium Rashba Field**
- The non - equilibrium Rashba field causes complex spin precession, and as the strength of SOI increases, the domain wall motion changes from translation to oscillation.
- This field can cause changes in the domain wall velocity and shape, as well as in depinning and critical current density (Walker breakdown).
3. **Controlling Role of Current Pulse**
- Current pulses of different lengths can efficiently control domain wall motion, including its direction and velocity.
### Main Findings
- Weak Rashba coupling is already able to generate a significant non - equilibrium Rashba field, thus having a huge impact on domain wall dynamics.
- Current pulses can not only control the speed of the domain wall, but also change its direction of motion, and even make the domain wall move in the opposite direction of the current.
- Ultra - fast and efficient domain wall dynamics are predicted, providing theoretical support for future experiments.
### Formula Representation
The key formulas involved in the paper include:
- **Non - equilibrium Rashba Field**
\[
H_R = H^{(0)}_R e_y, \quad H^{(0)}_R=\frac{\alpha_R I_s \Delta_{sd}}{v}
\]
- **Sloncewski - type Non - adiabatic Rashba Spin Torque**
\[
T_2=\left(\beta^{(i)} \frac{\alpha_R I_s \Delta_{sd}}{v}\right) n\times(n\times e_y)
\]
- **First - order - corrected Spin Torque**
\[
T^{(1)}=-I_s \partial_x n+\beta^{(i)} I_s n\times\partial_x n - H^{(1)}_R n\times e_y
\]
These formulas reveal the complex influence of spin - orbit coupling and spin relaxation on domain wall motion, especially the behavior under non - equilibrium conditions.