TDDB in the presence of interface states: Implications for the PMOS reliability margin

T. Nigam,P. Peumans
DOI: https://doi.org/10.1109/IEDM.2008.4796814
2008-12-01
Abstract:The reduced voltage scaling parameter for PMOS TDDB at low voltages is a concern for ultra-thin gate oxides. We show that it is caused by a change in breakdown statistics due to additional interface defects generated by cold holes. This has important implications for product lifetime at low failure fractions and large areas.
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