Abstract:Tin selenide (SnSe) and tin sulfide (SnS) have recently attracted particular interest due to their great potential for large-scale thermoelectric applications. A complete prediction of the thermoelectric performance and the understanding of underlying heat and charge transport details are the key to further improvement of their thermoelectric efficiency. We conduct comprehensive investigations of both thermal and electrical transport properties of SnSe and SnS using first-principles calculations combined with the Boltzmann transport theory. Due to the distinct layered lattice structure, SnSe and SnS exhibit similarly anisotropic thermal and electrical behaviors. The cross-plane lattice thermal conductivity κL is 40–60% lower than the in-plane values. Extremely low κL is found for both materials because of high anharmonicity, while the average κL of SnS is ∼8% higher than that of SnSe from 300 to 750 K. It is suggested that nanostructuring would be difficult to further decrease κL because of the short mean free paths of dominant phonon modes (1–30 nm at 300 K), while alloying would be efficient in reducing κL considering that the relative κL contribution (∼65%) of optical phonons is remarkably large. On the electrical side, the anisotropic electrical conductivities are mainly due to the different effective masses of holes and electrons along the a, b, and c axes. This leads to the highest optimal ZT values along the b axis and lowest ones along the a axis in both p-type materials. However, the n-type ones exhibit the highest ZTs along the a axis due to the enhancement of power factor when the chemical potential gradually approaches the secondary conduction band valley that causes significant increase in electron mobility and density of states. Owing to the larger mobility and smaller κL along the given direction, SnSe exhibits larger optimal ZTs compared with SnS in both p- and n-type materials. For both materials, the peak ZTs of n-type materials are much higher than those of p-type ones along the same direction. The predicted highest ZT values at 750 K are 1.0 in SnSe and 0.6 in SnS along the b axis for the p-type doping, while those for the n-type doping reach 2.7 in SnSe and 1.5 in SnS along the a axis, rendering them among the best bulk thermoelectric materials for large-scale applications. Our calculations show reasonable agreements with the experimental results and quantitatively predict the great potential in further enhancing the thermoelectric performance of SnSe and SnS, especially for the n-type materials.

New type of thermoelectric conversion of energy by semiconducting liquid anisotropic media

Anisotropic thermoelectric properties of Weyl semimetal NbX (X = P and As): a potential thermoelectric material.

Thin films of topological nodal line semimetals as a candidate for efficient thermoelectric converters

Recent Advances in Liquid‐Like Thermoelectric Materials

Efficient Zn-based pn-junction thermoelectric device for energy harvesting

High thermoelectric performance in ZnSb-SnTe pseudo-binary materials

Understanding the Asymmetrical Thermoelectric Performance for Discovering Promising Thermoelectric Materials

Realizing High In-plane Carrier Mobility in N-type SnSe Crystals through Deformation Potential Modification

3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals

Anomalous thermal effect in observed via photothermal measurements

Thermoelectricity at a gallium-mercury liquid metal interface

Highly Textured N-Type SnSe Polycrystals with Enhanced Thermoelectric Performance.

First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS

High-Performance Low-Cost n-Type Se-Doped Mg3Sb2-Based Zintl Compounds for Thermoelectric Application

3D charge and 2D phonon transports leading to high out-of-plane <i>ZT</i> in n-type SnSe crystals

Large transverse thermoelectric effect induced by the mixed-dimensionality of Fermi surfaces

Phase-engineered SnSex Toward SnSe2/SnSe Heterostructure with Improved Thermal Conductance by a Low-Temperature Plasma-Assisted Chemical Vapor Reaction

Liquid Thermocells Enable Low-Grade Heat Harvesting

Study On Anisotropy Of N-Type Mg3sb2-Based Thermoelectric Materials

Ion Exchange Induced Efficient N‐Type Thermoelectrics in Solid‐State